1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation

K. Merghem; S. Azouigui; Q. Zou; A. Martinez; N. Chimot; A. Accard; F. Lelarge; A. Ramdane

doi:10.1109/ISLC.2010.5642654

1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation

K. Merghem
, S. Azouigui
, Q. Zou
, A. Martinez
, N. Chimot
, A. Accard
, F. Lelarge
, A. Ramdane

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The tolerance to optical feedback of p-type doped InAs/InP quantum dash based DFB lasers is investigated. Optimized devices show a record -18 dB onset of coherence collapse compliant with 10 Gb/s Ethernet standard for isolator-free operation.

Original language	English
Title of host publication	2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	178-179
Number of pages	2
ISBN (Print)	9781424456833
DOIs	https://doi.org/10.1109/ISLC.2010.5642654
Publication status	Published - 1 Jan 2010
Externally published	Yes
Event	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan Duration: 26 Sept 2010 → 30 Sept 2010

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
Country/Territory	Japan
City	Kyoto
Period	26/09/10 → 30/09/10

Access to Document

10.1109/ISLC.2010.5642654

Cite this

Merghem, K., Azouigui, S., Zou, Q., Martinez, A., Chimot, N., Accard, A., Lelarge, F., & Ramdane, A. (2010). 1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation. In 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010 (pp. 178-179). Article 5642654 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2010.5642654

@inproceedings{148ea0a106784a0da877fac19dfc24c8,

title = "1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation",

abstract = "The tolerance to optical feedback of p-type doped InAs/InP quantum dash based DFB lasers is investigated. Optimized devices show a record -18 dB onset of coherence collapse compliant with 10 Gb/s Ethernet standard for isolator-free operation.",

author = "K. Merghem and S. Azouigui and Q. Zou and A. Martinez and N. Chimot and A. Accard and F. Lelarge and A. Ramdane",

year = "2010",

month = jan,

day = "1",

doi = "10.1109/ISLC.2010.5642654",

language = "English",

isbn = "9781424456833",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "178--179",

booktitle = "2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010",

note = "2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 ; Conference date: 26-09-2010 Through 30-09-2010",

}

Merghem, K, Azouigui, S, Zou, Q, Martinez, A, Chimot, N, Accard, A, Lelarge, F & Ramdane, A 2010, 1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation. in 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010., 5642654, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 178-179, 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010, Kyoto, Japan, 26/09/10. https://doi.org/10.1109/ISLC.2010.5642654

1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation. / Merghem, K.; Azouigui, S.; Zou, Q. et al.
2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010. Institute of Electrical and Electronics Engineers Inc., 2010. p. 178-179 5642654 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation

AU - Merghem, K.

AU - Azouigui, S.

AU - Zou, Q.

AU - Martinez, A.

AU - Chimot, N.

AU - Accard, A.

AU - Lelarge, F.

AU - Ramdane, A.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The tolerance to optical feedback of p-type doped InAs/InP quantum dash based DFB lasers is investigated. Optimized devices show a record -18 dB onset of coherence collapse compliant with 10 Gb/s Ethernet standard for isolator-free operation.

AB - The tolerance to optical feedback of p-type doped InAs/InP quantum dash based DFB lasers is investigated. Optimized devices show a record -18 dB onset of coherence collapse compliant with 10 Gb/s Ethernet standard for isolator-free operation.

U2 - 10.1109/ISLC.2010.5642654

DO - 10.1109/ISLC.2010.5642654

M3 - Conference contribution

AN - SCOPUS:78651102584

SN - 9781424456833

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 178

EP - 179

BT - 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010

Y2 - 26 September 2010 through 30 September 2010

ER -

Merghem K, Azouigui S, Zou Q, Martinez A, Chimot N, Accard A et al. 1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation. In 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010. Institute of Electrical and Electronics Engineers Inc. 2010. p. 178-179. 5642654. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2010.5642654

1.54 μm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation

Abstract

Publication series

Conference

Access to Document

Fingerprint

Cite this