1.55 μm high efficiency tapered DFB laser using UV 250 2-in technology process

V. Voiriot; B. Thedrez; J. L. Gentner; J. M. Rainsant; V. Colson; C. Duchemin; F. Gaborit; S. Hubert; J. L. Lafragette; A. Pinquier; L. Roux; B. Fernier

1.55 μm high efficiency tapered DFB laser using UV 250 2-in technology process

V. Voiriot
, B. Thedrez
, J. L. Gentner
, J. M. Rainsant
, V. Colson
, C. Duchemin
, F. Gaborit
, S. Hubert
, J. L. Lafragette
, A. Pinquier
, L. Roux
, B. Fernier

Opto+-GIE

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 μm. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity and run to run reproducibility is simultaneously achieved. 15°×15° front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25 °C have been measured on 500 μm long lasers.

Original language	English
Pages (from-to)	33-36
Number of pages	4
Journal	Conference Proceedings-International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1 Jan 1999
Externally published	Yes
Event	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz Duration: 16 May 1999 → 20 May 1999

Cite this

@article{a1b7b5b244d549f0aaae024266661c7c,

title = "1.55 μm high efficiency tapered DFB laser using UV 250 2-in technology process",

abstract = "We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 μm. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity and run to run reproducibility is simultaneously achieved. 15°×15° front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25 °C have been measured on 500 μm long lasers.",

author = "V. Voiriot and B. Thedrez and Gentner, \{J. L.\} and Rainsant, \{J. M.\} and V. Colson and C. Duchemin and F. Gaborit and S. Hubert and Lafragette, \{J. L.\} and A. Pinquier and L. Roux and B. Fernier",

year = "1999",

month = jan,

day = "1",

language = "English",

pages = "33--36",

journal = "Conference Proceedings-International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 16-05-1999 Through 20-05-1999",

}

TY - JOUR

T1 - 1.55 μm high efficiency tapered DFB laser using UV 250 2-in technology process

AU - Voiriot, V.

AU - Thedrez, B.

AU - Gentner, J. L.

AU - Rainsant, J. M.

AU - Colson, V.

AU - Duchemin, C.

AU - Gaborit, F.

AU - Hubert, S.

AU - Lafragette, J. L.

AU - Pinquier, A.

AU - Roux, L.

AU - Fernier, B.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 μm. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity and run to run reproducibility is simultaneously achieved. 15°×15° front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25 °C have been measured on 500 μm long lasers.

AB - We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 μm. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity and run to run reproducibility is simultaneously achieved. 15°×15° front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25 °C have been measured on 500 μm long lasers.

M3 - Conference article

AN - SCOPUS:0032691945

SN - 1092-8669

SP - 33

EP - 36

JO - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)

Y2 - 16 May 1999 through 20 May 1999

ER -

1.55 μm high efficiency tapered DFB laser using UV 250 2-in technology process

Abstract

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