20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

K. Klaime; R. Piron; C. Paranthoen; T. Batte; F. Grillot; O. Dehaese; S. Loualiche; A. Le Corre; R. Rosales; K. Merghem; A. Martinez; A. Ramdane

doi:10.1109/ICIPRM.2012.6403352

20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

K. Klaime, R. Piron, C. Paranthoen, T. Batte, F. Grillot, O. Dehaese, S. Loualiche, A. Le Corre, R. Rosales, K. Merghem, A. Martinez, A. Ramdane

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.

Original language	English
Title of host publication	2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
Pages	181-184
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2012.6403352
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 - Santa Barbara, CA, United States Duration: 27 Aug 2012 → 30 Aug 2012

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
Country/Territory	United States
City	Santa Barbara, CA
Period	27/08/12 → 30/08/12

Keywords

Mode-locking
quantum dots (QDs)
semiconductors laser

Access to Document

10.1109/ICIPRM.2012.6403352

Cite this

Klaime, K., Piron, R., Paranthoen, C., Batte, T., Grillot, F., Dehaese, O., Loualiche, S., Le Corre, A., Rosales, R., Merghem, K., Martinez, A., & Ramdane, A. (2012). 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate. In 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 (pp. 181-184). Article 6403352 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2012.6403352

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title = "20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate",

abstract = "We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.",

keywords = "Mode-locking, quantum dots (QDs), semiconductors laser",

author = "K. Klaime and R. Piron and C. Paranthoen and T. Batte and F. Grillot and O. Dehaese and S. Loualiche and \{Le Corre\}, A. and R. Rosales and K. Merghem and A. Martinez and A. Ramdane",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/ICIPRM.2012.6403352",

language = "English",

isbn = "9781467317252",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "181--184",

booktitle = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012",

note = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 ; Conference date: 27-08-2012 Through 30-08-2012",

}

Klaime, K, Piron, R, Paranthoen, C, Batte, T, Grillot, F, Dehaese, O, Loualiche, S, Le Corre, A, Rosales, R, Merghem, K, Martinez, A & Ramdane, A 2012, 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate. in 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012., 6403352, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 181-184, 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012, Santa Barbara, CA, United States, 27/08/12. https://doi.org/10.1109/ICIPRM.2012.6403352

20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate. / Klaime, K.; Piron, R.; Paranthoen, C. et al.
2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. 2012. p. 181-184 6403352 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

AU - Klaime, K.

AU - Piron, R.

AU - Paranthoen, C.

AU - Batte, T.

AU - Grillot, F.

AU - Dehaese, O.

AU - Loualiche, S.

AU - Le Corre, A.

AU - Rosales, R.

AU - Merghem, K.

AU - Martinez, A.

AU - Ramdane, A.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.

AB - We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.

KW - Mode-locking

KW - quantum dots (QDs)

KW - semiconductors laser

U2 - 10.1109/ICIPRM.2012.6403352

DO - 10.1109/ICIPRM.2012.6403352

M3 - Conference contribution

AN - SCOPUS:84873164065

SN - 9781467317252

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 181

EP - 184

BT - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012

T2 - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012

Y2 - 27 August 2012 through 30 August 2012

ER -

Klaime K, Piron R, Paranthoen C, Batte T, Grillot F, Dehaese O et al. 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate. In 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. 2012. p. 181-184. 6403352. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2012.6403352

20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

Abstract

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Conference

Keywords

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