40-Gb/s colorless reflective amplified modulator

Katarzyna Lawniczuk; Olivier Patard; Ronan Guillamet; Nicolas Chimot; Alexandre Garreau; Christophe Kazmierski; Guy Aubin; Kamel Merghem

doi:10.1109/LPT.2013.2238622

40-Gb/s colorless reflective amplified modulator

Katarzyna Lawniczuk, Olivier Patard, Ronan Guillamet, Nicolas Chimot, Alexandre Garreau, Christophe Kazmierski, Guy Aubin, Kamel Merghem

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we demonstrate a colorless reflective amplified modulator operating within the C-and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtain a stable, open eye performance of the device at the temperature until 85 ° C. The presented device is fabricated using an indium phosphide (InP) monolithic integration platform, which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth, and low-parasitic RC semi-insulating buried heterostructures.

Original language	English
Article number	6407755
Pages (from-to)	341-343
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2013.2238622
Publication status	Published - 8 Feb 2013
Externally published	Yes

Keywords

Electro-absorption modulator
indium phosphide
optical access network
photonic integrated circuit
reflective amplified modulator
semiconductor optical amplifier

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10.1109/LPT.2013.2238622

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@article{00a0bbd66f9c47428714c2aa62da2907,

title = "40-Gb/s colorless reflective amplified modulator",

abstract = "In this letter, we demonstrate a colorless reflective amplified modulator operating within the C-and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtain a stable, open eye performance of the device at the temperature until 85 ° C. The presented device is fabricated using an indium phosphide (InP) monolithic integration platform, which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth, and low-parasitic RC semi-insulating buried heterostructures.",

keywords = "Electro-absorption modulator, indium phosphide, optical access network, photonic integrated circuit, reflective amplified modulator, semiconductor optical amplifier",

author = "Katarzyna Lawniczuk and Olivier Patard and Ronan Guillamet and Nicolas Chimot and Alexandre Garreau and Christophe Kazmierski and Guy Aubin and Kamel Merghem",

year = "2013",

month = feb,

day = "8",

doi = "10.1109/LPT.2013.2238622",

language = "English",

volume = "25",

pages = "341--343",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "4",

}

TY - JOUR

T1 - 40-Gb/s colorless reflective amplified modulator

AU - Lawniczuk, Katarzyna

AU - Patard, Olivier

AU - Guillamet, Ronan

AU - Chimot, Nicolas

AU - Garreau, Alexandre

AU - Kazmierski, Christophe

AU - Aubin, Guy

AU - Merghem, Kamel

PY - 2013/2/8

Y1 - 2013/2/8

N2 - In this letter, we demonstrate a colorless reflective amplified modulator operating within the C-and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtain a stable, open eye performance of the device at the temperature until 85 ° C. The presented device is fabricated using an indium phosphide (InP) monolithic integration platform, which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth, and low-parasitic RC semi-insulating buried heterostructures.

AB - In this letter, we demonstrate a colorless reflective amplified modulator operating within the C-and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtain a stable, open eye performance of the device at the temperature until 85 ° C. The presented device is fabricated using an indium phosphide (InP) monolithic integration platform, which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth, and low-parasitic RC semi-insulating buried heterostructures.

KW - Electro-absorption modulator

KW - indium phosphide

KW - optical access network

KW - photonic integrated circuit

KW - reflective amplified modulator

KW - semiconductor optical amplifier

U2 - 10.1109/LPT.2013.2238622

DO - 10.1109/LPT.2013.2238622

M3 - Article

AN - SCOPUS:84873300464

SN - 1041-1135

VL - 25

SP - 341

EP - 343

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

M1 - 6407755

ER -

40-Gb/s colorless reflective amplified modulator

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Keywords

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