5 Watt GaN HEMT power amplifier for LTE

Kyriaki Niotaki; Ana Collado; Apostolos Georgiadis; John Vardakas

5 Watt GaN HEMT power amplifier for LTE

Kyriaki Niotaki, Ana Collado, Apostolos Georgiadis, John Vardakas

Research output: Contribution to journal › Article › peer-review

Abstract

This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5 MHz to 20 MHz).

Original language	English
Pages (from-to)	338-344
Number of pages	7
Journal	Radioengineering
Volume	23
Issue number	1
Publication status	Published - 1 Jan 2014
Externally published	Yes

Keywords

ACPR
GaN HEMT
LTE
Linearity
PAPR
Power amplifier

Cite this

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title = "5 Watt GaN HEMT power amplifier for LTE",

abstract = "This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 \% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5 MHz to 20 MHz).",

keywords = "ACPR, GaN HEMT, LTE, Linearity, PAPR, Power amplifier",

author = "Kyriaki Niotaki and Ana Collado and Apostolos Georgiadis and John Vardakas",

year = "2014",

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language = "English",

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pages = "338--344",

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T1 - 5 Watt GaN HEMT power amplifier for LTE

AU - Niotaki, Kyriaki

AU - Collado, Ana

AU - Georgiadis, Apostolos

AU - Vardakas, John

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5 MHz to 20 MHz).

AB - This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5 MHz to 20 MHz).

KW - ACPR

KW - GaN HEMT

KW - LTE

KW - Linearity

KW - PAPR

KW - Power amplifier

M3 - Article

AN - SCOPUS:84898795659

SN - 1210-2512

VL - 23

SP - 338

EP - 344

JO - Radioengineering

JF - Radioengineering

IS - 1

ER -

5 Watt GaN HEMT power amplifier for LTE

Abstract

Keywords

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