9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

A. Martinez; J. G. Provost; B. Dagens; V. Sallet; D. Jahan; K. Merghem; L. Ferlazzo; J. Landreau; O. Le Gouezigou; J. C. Harmand; A. Ramdane

doi:10.1049/el:20040305

9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

A. Martinez
, J. G. Provost
, B. Dagens
, V. Sallet
, D. Jahan
, K. Merghem
, L. Ferlazzo
, J. Landreau
, O. Le Gouezigou
, J. C. Harmand
, A. Ramdane

CNRS/Lab. Photonique Nanostructures
Research and Invovation Department

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.

Original language	English
Pages (from-to)	425-427
Number of pages	3
Journal	Electronics Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1049/el:20040305
Publication status	Published - 1 Apr 2004
Externally published	Yes

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title = "9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm",

abstract = "High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.",

author = "A. Martinez and Provost, \{J. G.\} and B. Dagens and V. Sallet and D. Jahan and K. Merghem and L. Ferlazzo and J. Landreau and \{Le Gouezigou\}, O. and Harmand, \{J. C.\} and A. Ramdane",

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doi = "10.1049/el:20040305",

language = "English",

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journal = "Electronics Letters",

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T1 - 9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

AU - Martinez, A.

AU - Provost, J. G.

AU - Dagens, B.

AU - Sallet, V.

AU - Jahan, D.

AU - Merghem, K.

AU - Ferlazzo, L.

AU - Landreau, J.

AU - Le Gouezigou, O.

AU - Harmand, J. C.

AU - Ramdane, A.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.

AB - High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.

U2 - 10.1049/el:20040305

DO - 10.1049/el:20040305

M3 - Article

AN - SCOPUS:11144357452

SN - 0013-5194

VL - 40

SP - 425

EP - 427

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

Abstract

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