9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

A. Martinez; J. G. Provost; B. Dagens; V. Sallet; D. Jahan; K. Merghem; L. Ferlazzo; J. Landreau; O. Le Gouezigou; J. C. Harmand; A. Ramdane

doi:10.1049/el:20040305

9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

A. Martinez, J. G. Provost, B. Dagens, V. Sallet, D. Jahan, K. Merghem, L. Ferlazzo, J. Landreau, O. Le Gouezigou, J. C. Harmand, A. Ramdane

Research output: Contribution to journal › Article › peer-review

Abstract

High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.

Original language	English
Pages (from-to)	425-427
Number of pages	3
Journal	Electronics Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1049/el:20040305
Publication status	Published - 1 Apr 2004
Externally published	Yes

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@article{1cf2239b94954467a917cc8d0ef8c2ff,

title = "9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm",

abstract = "High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.",

author = "A. Martinez and Provost, \{J. G.\} and B. Dagens and V. Sallet and D. Jahan and K. Merghem and L. Ferlazzo and J. Landreau and \{Le Gouezigou\}, O. and Harmand, \{J. C.\} and A. Ramdane",

year = "2004",

month = apr,

day = "1",

doi = "10.1049/el:20040305",

language = "English",

volume = "40",

pages = "425--427",

journal = "Electronics Letters",

issn = "0013-5194",

number = "7",

}

TY - JOUR

T1 - 9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

AU - Martinez, A.

AU - Provost, J. G.

AU - Dagens, B.

AU - Sallet, V.

AU - Jahan, D.

AU - Merghem, K.

AU - Ferlazzo, L.

AU - Landreau, J.

AU - Le Gouezigou, O.

AU - Harmand, J. C.

AU - Ramdane, A.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.

AB - High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.

U2 - 10.1049/el:20040305

DO - 10.1049/el:20040305

M3 - Article

AN - SCOPUS:11144357452

SN - 0013-5194

VL - 40

SP - 425

EP - 427

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

Abstract

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