A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se) 2 solar cells

C. Hubert, N. Naghavi, A. Etcheberry, O. Roussel, D. Hariskos, M. Powalla, O. Kerrec, D. Lincot

Research output: Contribution to journalArticlepeer-review

Abstract

In the field of Cu(Ga,In)(S,Se) 2 photovoltaic technology, zinc sulphide based buffer layers prepared by Chemical Bath Deposition (CBD) have already demonstrated their potential to replace CdS. This paper aims on a better understanding of deposition mechanism of the Zn(S,O,OH) buffer layers. First, the influence of deposition parameters is studied from solution chemistry considerations by constructing solubility diagrams of ZnS, ZnO, and Zn(OH) 2. Experimental studies are then carried out by the in situ quartz crystal microgravimetry (QCM) technique. A global equation for the growth rate is derived from these experiments. The morphology and composition of Zn(S,O,OH) films are then determined using scanning electron microscopy and X-ray photoelectron spectroscopy techniques. Electro-deposited-CIS/Zn(S,O,OH)/ZnO and co-evaporated-CIGS/Zn(S,O,OH)/ZnO cells were prepared with efficiencies similar to that of reference CBD CdS buffer layers.

Original languageEnglish
Pages (from-to)2335-2339
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number10
DOIs
Publication statusPublished - 1 Oct 2008

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