A better understanding of the reaction pathways in the formation of Cu2ZnSn(Sx,Se1−x)4 thin films

Solange Temgoua; R. Bodeux; N. Naghavi

doi:10.1016/j.solmat.2017.07.031

A better understanding of the reaction pathways in the formation of Cu₂ZnSn(S_x,Se_1−x)₄ thin films

Solange Temgoua
, R. Bodeux
, N. Naghavi

Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

This work carries out a study on the reaction pathways during the selenization of Cu-Zn-Sn-S sulfide precursors deposited on Mo/glass. The effect of the annealing temperature on the structural and compositional properties of the materials was studied between 250 and 600 °C combining glow discharge optical emission spectroscopy (GD-OES), x-ray diffraction, and Raman spectroscopy measurements. Through a deep chemical-physical characterization of the front, bulk and back regions of the CZTSSe layers, we show that both diffusion phenomena and the chemical affinity between some elements govern the reaction pathway. The experimental observations support a formation mechanism of CZTSSe that proceeds through two different paths. At the surface, the progressive incorporation of Se triggers the diffusion of Sn to the surface, which results to a fast formation of tin selenides compared to copper selenides. In addition, the predominance of Se-rich CZTSSe is observed at the top part region.

Original language	English
Pages (from-to)	160-167
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	172
DOIs	https://doi.org/10.1016/j.solmat.2017.07.031
Publication status	Published - 1 Dec 2017

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Annealing
Characterization
Kësterites
Reaction mechanisms
Thin films solar cells

Access to Document

10.1016/j.solmat.2017.07.031

Cite this

@article{1014ed3800ae452c97e48ff5fac4401e,

title = "A better understanding of the reaction pathways in the formation of Cu2ZnSn(Sx,Se1−x)4 thin films",

abstract = "This work carries out a study on the reaction pathways during the selenization of Cu-Zn-Sn-S sulfide precursors deposited on Mo/glass. The effect of the annealing temperature on the structural and compositional properties of the materials was studied between 250 and 600 °C combining glow discharge optical emission spectroscopy (GD-OES), x-ray diffraction, and Raman spectroscopy measurements. Through a deep chemical-physical characterization of the front, bulk and back regions of the CZTSSe layers, we show that both diffusion phenomena and the chemical affinity between some elements govern the reaction pathway. The experimental observations support a formation mechanism of CZTSSe that proceeds through two different paths. At the surface, the progressive incorporation of Se triggers the diffusion of Sn to the surface, which results to a fast formation of tin selenides compared to copper selenides. In addition, the predominance of Se-rich CZTSSe is observed at the top part region.",

keywords = "Annealing, Characterization, K{\"e}sterites, Reaction mechanisms, Thin films solar cells",

author = "Solange Temgoua and R. Bodeux and N. Naghavi",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = dec,

day = "1",

doi = "10.1016/j.solmat.2017.07.031",

language = "English",

volume = "172",

pages = "160--167",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

}

TY - JOUR

T1 - A better understanding of the reaction pathways in the formation of Cu2ZnSn(Sx,Se1−x)4 thin films

AU - Temgoua, Solange

AU - Bodeux, R.

AU - Naghavi, N.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - This work carries out a study on the reaction pathways during the selenization of Cu-Zn-Sn-S sulfide precursors deposited on Mo/glass. The effect of the annealing temperature on the structural and compositional properties of the materials was studied between 250 and 600 °C combining glow discharge optical emission spectroscopy (GD-OES), x-ray diffraction, and Raman spectroscopy measurements. Through a deep chemical-physical characterization of the front, bulk and back regions of the CZTSSe layers, we show that both diffusion phenomena and the chemical affinity between some elements govern the reaction pathway. The experimental observations support a formation mechanism of CZTSSe that proceeds through two different paths. At the surface, the progressive incorporation of Se triggers the diffusion of Sn to the surface, which results to a fast formation of tin selenides compared to copper selenides. In addition, the predominance of Se-rich CZTSSe is observed at the top part region.

AB - This work carries out a study on the reaction pathways during the selenization of Cu-Zn-Sn-S sulfide precursors deposited on Mo/glass. The effect of the annealing temperature on the structural and compositional properties of the materials was studied between 250 and 600 °C combining glow discharge optical emission spectroscopy (GD-OES), x-ray diffraction, and Raman spectroscopy measurements. Through a deep chemical-physical characterization of the front, bulk and back regions of the CZTSSe layers, we show that both diffusion phenomena and the chemical affinity between some elements govern the reaction pathway. The experimental observations support a formation mechanism of CZTSSe that proceeds through two different paths. At the surface, the progressive incorporation of Se triggers the diffusion of Sn to the surface, which results to a fast formation of tin selenides compared to copper selenides. In addition, the predominance of Se-rich CZTSSe is observed at the top part region.

KW - Annealing

KW - Characterization

KW - Kësterites

KW - Reaction mechanisms

KW - Thin films solar cells

U2 - 10.1016/j.solmat.2017.07.031

DO - 10.1016/j.solmat.2017.07.031

M3 - Article

AN - SCOPUS:85026426643

SN - 0927-0248

VL - 172

SP - 160

EP - 167

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -