A candidate for grain boundary pipe diffusion and intrinsic electrical activity in silicon

O. B.M. Hardouin Duparc; M. Torrent

doi:10.4028/www.scientific.net/msf.207-209.221

A candidate for grain boundary pipe diffusion and intrinsic electrical activity in silicon

O. B.M. Hardouin Duparc
, M. Torrent

Laboratoire des Solides Irradiés

Research output: Contribution to journal › Article › peer-review

Abstract

The high temperature behaviour of a Σ = 25 (710) symmetric tilt Grain Boundary (GB) has been investigated by molecular dynamics simulation in Si. The core structure first oscillates between several variants and rapidly disorders to pipe diffusion. In addition, a low energy non fully tetra co-ordinated structure is found which has electronic states in the gap.

Original language	English
Pages (from-to)	221-224
Number of pages	4
Journal	Materials Science Forum
Volume	207-209
Issue number	PART 1
DOIs	https://doi.org/10.4028/www.scientific.net/msf.207-209.221
Publication status	Published - 1 Jan 1996

Keywords

Boundary
Conditions
Grain Boundary
Molecular Dynamics
Numerical Simulations
Silicon
Tight Binding

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10.4028/www.scientific.net/msf.207-209.221

Cite this

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title = "A candidate for grain boundary pipe diffusion and intrinsic electrical activity in silicon",

abstract = "The high temperature behaviour of a Σ = 25 (710) symmetric tilt Grain Boundary (GB) has been investigated by molecular dynamics simulation in Si. The core structure first oscillates between several variants and rapidly disorders to pipe diffusion. In addition, a low energy non fully tetra co-ordinated structure is found which has electronic states in the gap.",

keywords = "Boundary, Conditions, Grain Boundary, Molecular Dynamics, Numerical Simulations, Silicon, Tight Binding",

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year = "1996",

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AU - Hardouin Duparc, O. B.M.

AU - Torrent, M.

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N2 - The high temperature behaviour of a Σ = 25 (710) symmetric tilt Grain Boundary (GB) has been investigated by molecular dynamics simulation in Si. The core structure first oscillates between several variants and rapidly disorders to pipe diffusion. In addition, a low energy non fully tetra co-ordinated structure is found which has electronic states in the gap.

AB - The high temperature behaviour of a Σ = 25 (710) symmetric tilt Grain Boundary (GB) has been investigated by molecular dynamics simulation in Si. The core structure first oscillates between several variants and rapidly disorders to pipe diffusion. In addition, a low energy non fully tetra co-ordinated structure is found which has electronic states in the gap.

KW - Boundary

KW - Conditions

KW - Grain Boundary

KW - Molecular Dynamics

KW - Numerical Simulations

KW - Silicon

KW - Tight Binding

U2 - 10.4028/www.scientific.net/msf.207-209.221

DO - 10.4028/www.scientific.net/msf.207-209.221

M3 - Article

AN - SCOPUS:0348210160

SN - 0255-5476

VL - 207-209

SP - 221

EP - 224

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 1

ER -

A candidate for grain boundary pipe diffusion and intrinsic electrical activity in silicon

Abstract

Keywords

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