A Compact Model and Parameter Extraction Method for a Staggered OFET with Power-Law Contact Resistance and Mobility

We present a drain current model and a consistent parameter extraction method for organic field-effect transistors (OFETs) considering the gate voltage-dependent contact resistance and mobility by power-law. The physical origin of the asymptotic power-law dependence of contact resistance is elaborated based on the current crowding model. The parameters of a new model can be completely extracted without ambiguity by the proposed extraction method based on the linear fitting. Pentacene-based OFETs with the Au source/drain contact in a staggered configuration experimentally validate the proposed model and the extraction method, which further reveal the bulk resistivity as the major contribution to contact resistance.