A dual-band power amplifier based on composite right/left-handed matching networks

Kyriaki Niotaki; Ana Collado; Apostolos Georgiadis; John Vardakas

doi:10.1109/ECTC.2014.6897376

A dual-band power amplifier based on composite right/left-handed matching networks

Kyriaki Niotaki, Ana Collado, Apostolos Georgiadis, John Vardakas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents the design of a dual-band power amplifier operating at 2.4 GHz and 3.35 GHz. The proposed topology is based on the use of composite right/left-handed unit cells. A composite right/left-handed cell exhibits a dualband frequency response at an arbitrary pair of frequencies because of its phase characteristics. A power amplifier based on an enhancement mode pseudomorphic HEMT transistor is simulated and manufactured. The fabricated prototype leads to a dual-band amplification and is characterized in terms of measurements. A maximum drain efficiency of 65% and 52% is achieved for an output level of 28.7 dBm and 27.5 dBm at 2.4 GHz and 3.35 GHz, respectively. The presented approach can be applied for the design of dual-band matching networks for microwave circuits operating at two arbitrary frequencies.

Original language	English
Title of host publication	Proceedings - Electronic Components and Technology Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	796-802
Number of pages	7
ISBN (Electronic)	9781479924073
DOIs	https://doi.org/10.1109/ECTC.2014.6897376
Publication status	Published - 11 Sept 2014
Externally published	Yes
Event	64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States Duration: 27 May 2014 → 30 May 2014

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Conference

Conference	64th Electronic Components and Technology Conference, ECTC 2014
Country/Territory	United States
City	Orlando
Period	27/05/14 → 30/05/14

Access to Document

10.1109/ECTC.2014.6897376

Cite this

Niotaki, K., Collado, A., Georgiadis, A., & Vardakas, J. (2014). A dual-band power amplifier based on composite right/left-handed matching networks. In Proceedings - Electronic Components and Technology Conference (pp. 796-802). Article 6897376 (Proceedings - Electronic Components and Technology Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2014.6897376

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title = "A dual-band power amplifier based on composite right/left-handed matching networks",

abstract = "This paper presents the design of a dual-band power amplifier operating at 2.4 GHz and 3.35 GHz. The proposed topology is based on the use of composite right/left-handed unit cells. A composite right/left-handed cell exhibits a dualband frequency response at an arbitrary pair of frequencies because of its phase characteristics. A power amplifier based on an enhancement mode pseudomorphic HEMT transistor is simulated and manufactured. The fabricated prototype leads to a dual-band amplification and is characterized in terms of measurements. A maximum drain efficiency of 65\% and 52\% is achieved for an output level of 28.7 dBm and 27.5 dBm at 2.4 GHz and 3.35 GHz, respectively. The presented approach can be applied for the design of dual-band matching networks for microwave circuits operating at two arbitrary frequencies.",

author = "Kyriaki Niotaki and Ana Collado and Apostolos Georgiadis and John Vardakas",

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doi = "10.1109/ECTC.2014.6897376",

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Niotaki, K, Collado, A, Georgiadis, A & Vardakas, J 2014, A dual-band power amplifier based on composite right/left-handed matching networks. in Proceedings - Electronic Components and Technology Conference., 6897376, Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., pp. 796-802, 64th Electronic Components and Technology Conference, ECTC 2014, Orlando, United States, 27/05/14. https://doi.org/10.1109/ECTC.2014.6897376

A dual-band power amplifier based on composite right/left-handed matching networks. / Niotaki, Kyriaki; Collado, Ana; Georgiadis, Apostolos et al.
Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 796-802 6897376 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A dual-band power amplifier based on composite right/left-handed matching networks

AU - Niotaki, Kyriaki

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AU - Georgiadis, Apostolos

AU - Vardakas, John

PY - 2014/9/11

Y1 - 2014/9/11

N2 - This paper presents the design of a dual-band power amplifier operating at 2.4 GHz and 3.35 GHz. The proposed topology is based on the use of composite right/left-handed unit cells. A composite right/left-handed cell exhibits a dualband frequency response at an arbitrary pair of frequencies because of its phase characteristics. A power amplifier based on an enhancement mode pseudomorphic HEMT transistor is simulated and manufactured. The fabricated prototype leads to a dual-band amplification and is characterized in terms of measurements. A maximum drain efficiency of 65% and 52% is achieved for an output level of 28.7 dBm and 27.5 dBm at 2.4 GHz and 3.35 GHz, respectively. The presented approach can be applied for the design of dual-band matching networks for microwave circuits operating at two arbitrary frequencies.

AB - This paper presents the design of a dual-band power amplifier operating at 2.4 GHz and 3.35 GHz. The proposed topology is based on the use of composite right/left-handed unit cells. A composite right/left-handed cell exhibits a dualband frequency response at an arbitrary pair of frequencies because of its phase characteristics. A power amplifier based on an enhancement mode pseudomorphic HEMT transistor is simulated and manufactured. The fabricated prototype leads to a dual-band amplification and is characterized in terms of measurements. A maximum drain efficiency of 65% and 52% is achieved for an output level of 28.7 dBm and 27.5 dBm at 2.4 GHz and 3.35 GHz, respectively. The presented approach can be applied for the design of dual-band matching networks for microwave circuits operating at two arbitrary frequencies.

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DO - 10.1109/ECTC.2014.6897376

M3 - Conference contribution

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T3 - Proceedings - Electronic Components and Technology Conference

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BT - Proceedings - Electronic Components and Technology Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Electronic Components and Technology Conference, ECTC 2014

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Niotaki K, Collado A, Georgiadis A, Vardakas J. A dual-band power amplifier based on composite right/left-handed matching networks. In Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 796-802. 6897376. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2014.6897376

A dual-band power amplifier based on composite right/left-handed matching networks

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