A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge2Sb2Te5 Alloys

R. Miquel; T. Cabout; O. Cueto; B. Sklenard; M. Plapp

doi:10.23919/SISPAD57422.2023.10319485

A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys

R. Miquel
, T. Cabout
, O. Cueto
, B. Sklenard
, M. Plapp

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A self-consistent model for the simulation of Gerich Ge₂Sb₂Te₅ phase change memories is presented. Combining the multi-phase field model and a phase-aware electro-thermal solver, it reproduces the multi-physics behavior of the material. Simulations of memory operations are performed to demonstrate its ability to reproduce experimental observations.

Original language	English
Title of host publication	2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	317-320
Number of pages	4
ISBN (Electronic)	9784863488038
DOIs	https://doi.org/10.23919/SISPAD57422.2023.10319485
Publication status	Published - 1 Jan 2023
Event	2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 - Kobe, Japan Duration: 27 Sept 2023 → 29 Sept 2023

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023
Country/Territory	Japan
City	Kobe
Period	27/09/23 → 29/09/23

Access to Document

10.23919/SISPAD57422.2023.10319485

Cite this

Miquel, R., Cabout, T., Cueto, O., Sklenard, B., & Plapp, M. (2023). A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys. In 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 (pp. 317-320). (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD57422.2023.10319485

Miquel, R. ; Cabout, T. ; Cueto, O. et al. / A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys. 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 317-320 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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title = "A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge2Sb2Te5 Alloys",

abstract = "A self-consistent model for the simulation of Gerich Ge2Sb2Te5 phase change memories is presented. Combining the multi-phase field model and a phase-aware electro-thermal solver, it reproduces the multi-physics behavior of the material. Simulations of memory operations are performed to demonstrate its ability to reproduce experimental observations.",

author = "R. Miquel and T. Cabout and O. Cueto and B. Sklenard and M. Plapp",

note = "Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.; 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 ; Conference date: 27-09-2023 Through 29-09-2023",

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doi = "10.23919/SISPAD57422.2023.10319485",

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Miquel, R, Cabout, T, Cueto, O, Sklenard, B & Plapp, M 2023, A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys. in 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 317-320, 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023, Kobe, Japan, 27/09/23. https://doi.org/10.23919/SISPAD57422.2023.10319485

A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys. / Miquel, R.; Cabout, T.; Cueto, O. et al.
2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 317-320 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Miquel R, Cabout T, Cueto O, Sklenard B, Plapp M. A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys. In 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 317-320. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.23919/SISPAD57422.2023.10319485