A low-power σδADC optimized for GSM/EDGE standard in 65-nm CMOS

Hussein Fakhoury; Chadi Jabbour; Hasham Khushk; Van Tam Nguyen; Patrick Loumeau

doi:10.1109/ISCAS.2011.5937764

A low-power σδADC optimized for GSM/EDGE standard in 65-nm CMOS

Hussein Fakhoury
, Chadi Jabbour
, Hasham Khushk
, Van Tam Nguyen
, Patrick Loumeau

Telecom Paris

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A ADC with both Signal Transfer Function (STF) and Noise Transfer Function (NTF) optimized for GSM/EDGE application is presented. A direct-feedforward single-loop filter is used to improve linearity of the modulator at low supply voltage. From the edge of the signal bandwidth to over 1MHz of band, measured STF is flat and in-band ripple is less than 0.01dB. Clocked @ 26MHz the modulator achieves 82dB dynamic-range, 80dB peak SNR, 85dB peak THD, 88dBc peak SFDR. Implemented in 65-nm CMOS, it consumes 1.74mW from the 1.2V supply and occupies an active die area of 0.081mm² (395μm×205μm) without voltage references.

Original language	English
Title of host publication	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Pages	1109-1112
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2011.5937764
Publication status	Published - 2 Aug 2011
Event	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brazil Duration: 15 May 2011 → 18 May 2011

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Country/Territory	Brazil
City	Rio de Janeiro
Period	15/05/11 → 18/05/11

Access to Document

10.1109/ISCAS.2011.5937764

Cite this

@inproceedings{5d7ace4b9c464e5485368164d2bf5ff9,

title = "A low-power σδADC optimized for GSM/EDGE standard in 65-nm CMOS",

abstract = "A ADC with both Signal Transfer Function (STF) and Noise Transfer Function (NTF) optimized for GSM/EDGE application is presented. A direct-feedforward single-loop filter is used to improve linearity of the modulator at low supply voltage. From the edge of the signal bandwidth to over 1MHz of band, measured STF is flat and in-band ripple is less than 0.01dB. Clocked @ 26MHz the modulator achieves 82dB dynamic-range, 80dB peak SNR, 85dB peak THD, 88dBc peak SFDR. Implemented in 65-nm CMOS, it consumes 1.74mW from the 1.2V supply and occupies an active die area of 0.081mm2 (395μm×205μm) without voltage references.",

author = "Hussein Fakhoury and Chadi Jabbour and Hasham Khushk and Nguyen, \{Van Tam\} and Patrick Loumeau",

year = "2011",

month = aug,

day = "2",

doi = "10.1109/ISCAS.2011.5937764",

language = "English",

isbn = "9781424494736",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

pages = "1109--1112",

booktitle = "2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011",

note = "2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 ; Conference date: 15-05-2011 Through 18-05-2011",

}

Fakhoury, H, Jabbour, C, Khushk, H, Nguyen, VT & Loumeau, P 2011, A low-power σδADC optimized for GSM/EDGE standard in 65-nm CMOS. in 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011., 5937764, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 1109-1112, 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011, Rio de Janeiro, Brazil, 15/05/11. https://doi.org/10.1109/ISCAS.2011.5937764

A low-power σδADC optimized for GSM/EDGE standard in 65-nm CMOS. / Fakhoury, Hussein; Jabbour, Chadi; Khushk, Hasham et al.
2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011. 2011. p. 1109-1112 5937764 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A low-power σδADC optimized for GSM/EDGE standard in 65-nm CMOS

AU - Fakhoury, Hussein

AU - Jabbour, Chadi

AU - Khushk, Hasham

AU - Nguyen, Van Tam

AU - Loumeau, Patrick

PY - 2011/8/2

Y1 - 2011/8/2

N2 - A ADC with both Signal Transfer Function (STF) and Noise Transfer Function (NTF) optimized for GSM/EDGE application is presented. A direct-feedforward single-loop filter is used to improve linearity of the modulator at low supply voltage. From the edge of the signal bandwidth to over 1MHz of band, measured STF is flat and in-band ripple is less than 0.01dB. Clocked @ 26MHz the modulator achieves 82dB dynamic-range, 80dB peak SNR, 85dB peak THD, 88dBc peak SFDR. Implemented in 65-nm CMOS, it consumes 1.74mW from the 1.2V supply and occupies an active die area of 0.081mm2 (395μm×205μm) without voltage references.

AB - A ADC with both Signal Transfer Function (STF) and Noise Transfer Function (NTF) optimized for GSM/EDGE application is presented. A direct-feedforward single-loop filter is used to improve linearity of the modulator at low supply voltage. From the edge of the signal bandwidth to over 1MHz of band, measured STF is flat and in-band ripple is less than 0.01dB. Clocked @ 26MHz the modulator achieves 82dB dynamic-range, 80dB peak SNR, 85dB peak THD, 88dBc peak SFDR. Implemented in 65-nm CMOS, it consumes 1.74mW from the 1.2V supply and occupies an active die area of 0.081mm2 (395μm×205μm) without voltage references.

U2 - 10.1109/ISCAS.2011.5937764

DO - 10.1109/ISCAS.2011.5937764

M3 - Conference contribution

AN - SCOPUS:79960886023

SN - 9781424494736

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

SP - 1109

EP - 1112

BT - 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011

T2 - 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011

Y2 - 15 May 2011 through 18 May 2011

ER -

A low-power σδADC optimized for GSM/EDGE standard in 65-nm CMOS

Abstract

Publication series

Conference

Access to Document

Fingerprint

Cite this