A new calculation approach of transistor noise parameters as a function of gatewidth and bias current

Ahmed Gasmi; Bernard Huyart; Eric Bergeault; Louis P. Jallet

doi:10.1109/22.563331

A new calculation approach of transistor noise parameters as a function of gatewidth and bias current

Ahmed Gasmi
, Bernard Huyart
, Eric Bergeault
, Louis P. Jallet

Telecom Paris

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper a new method to calculate the noise parameters of transistors T; (MESFET or HEMT) as a function of gatewidth and drain-bias current is presented. This method needs the knowledge of the R, P, and C coefficients. It is based on the measurement of the noise parameters of a reference transistor Tr at two bias points (/dsi and 7ds2), and the equivalent circuit elements' values of all transistors T;. Using this method, the noise parameters (F_min, r_opt, R_n) for two MESFET's T; biased at another current i_ds3 are obtained. Good agreement between the predicted and measured noise parameters' values is obtained for a broad frequency range (4-20 GHz).

Original language	English
Pages (from-to)	338-344
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	45
Issue number	3
DOIs	https://doi.org/10.1109/22.563331
Publication status	Published - 1 Dec 1997

Keywords

HEMT
MESFET
MMIC
Modelization
Noise

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10.1109/22.563331

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title = "A new calculation approach of transistor noise parameters as a function of gatewidth and bias current",

abstract = "In this paper a new method to calculate the noise parameters of transistors T; (MESFET or HEMT) as a function of gatewidth and drain-bias current is presented. This method needs the knowledge of the R, P, and C coefficients. It is based on the measurement of the noise parameters of a reference transistor Tr at two bias points (/dsi and 7ds2), and the equivalent circuit elements' values of all transistors T;. Using this method, the noise parameters (Fmin, ropt, Rn) for two MESFET's T; biased at another current ids3 are obtained. Good agreement between the predicted and measured noise parameters' values is obtained for a broad frequency range (4-20 GHz).",

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author = "Ahmed Gasmi and Bernard Huyart and Eric Bergeault and Jallet, \{Louis P.\}",

year = "1997",

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T1 - A new calculation approach of transistor noise parameters as a function of gatewidth and bias current

AU - Gasmi, Ahmed

AU - Huyart, Bernard

AU - Bergeault, Eric

AU - Jallet, Louis P.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - In this paper a new method to calculate the noise parameters of transistors T; (MESFET or HEMT) as a function of gatewidth and drain-bias current is presented. This method needs the knowledge of the R, P, and C coefficients. It is based on the measurement of the noise parameters of a reference transistor Tr at two bias points (/dsi and 7ds2), and the equivalent circuit elements' values of all transistors T;. Using this method, the noise parameters (Fmin, ropt, Rn) for two MESFET's T; biased at another current ids3 are obtained. Good agreement between the predicted and measured noise parameters' values is obtained for a broad frequency range (4-20 GHz).

AB - In this paper a new method to calculate the noise parameters of transistors T; (MESFET or HEMT) as a function of gatewidth and drain-bias current is presented. This method needs the knowledge of the R, P, and C coefficients. It is based on the measurement of the noise parameters of a reference transistor Tr at two bias points (/dsi and 7ds2), and the equivalent circuit elements' values of all transistors T;. Using this method, the noise parameters (Fmin, ropt, Rn) for two MESFET's T; biased at another current ids3 are obtained. Good agreement between the predicted and measured noise parameters' values is obtained for a broad frequency range (4-20 GHz).

KW - HEMT

KW - MESFET

KW - MMIC

KW - Modelization

KW - Noise

U2 - 10.1109/22.563331

DO - 10.1109/22.563331

M3 - Article

AN - SCOPUS:0031095403

SN - 0018-9480

VL - 45

SP - 338

EP - 344

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 3

ER -

A new calculation approach of transistor noise parameters as a function of gatewidth and bias current

Abstract

Keywords

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