A new empirical I-V model for NMOS and PMOS transistors

Francisco I. Hirata; Muriel Muller; Yang Ni; Claude Gimenes

doi:10.1109/ICM.2007.4497728

A new empirical I-V model for NMOS and PMOS transistors

Francisco I. Hirata, Muriel Muller, Yang Ni, Claude Gimenes

CNRS SAMOVAR UMR 5157

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The authors arc with the Department of Electronics and Physics, Institute National of Telecommunications, 91000 Evry, France This paper describes a new empirical model, capable of modeling with high accuracy the current-voltage (I-V) characteristics of metal-oxide semiconductor (MOS) transistors of n-type (nMOS) and p-type (pMOS). The I-V model presents a simplified parameters extraction method, easy to obtain and to implement using computer aide design (CAD) software. The model was validated under DC and transient simulations. The extraction procedure and results are described in the article.

Original language	English
Title of host publication	Proceedings of the 19th International Conference on Microelectronics, ICM
Pages	355-358
Number of pages	4
DOIs	https://doi.org/10.1109/ICM.2007.4497728
Publication status	Published - 1 Dec 2007
Externally published	Yes
Event	19th International Conference on Microelectronics, ICM - Cairo, Egypt Duration: 29 Dec 2007 → 31 Dec 2007

Publication series

Name	Proceedings of the International Conference on Microelectronics, ICM

Conference

Conference	19th International Conference on Microelectronics, ICM
Country/Territory	Egypt
City	Cairo
Period	29/12/07 → 31/12/07

Keywords

CMOS
FET
Modeling
NMOS
PMOS

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10.1109/ICM.2007.4497728

Cite this

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title = "A new empirical I-V model for NMOS and PMOS transistors",

abstract = "The authors arc with the Department of Electronics and Physics, Institute National of Telecommunications, 91000 Evry, France This paper describes a new empirical model, capable of modeling with high accuracy the current-voltage (I-V) characteristics of metal-oxide semiconductor (MOS) transistors of n-type (nMOS) and p-type (pMOS). The I-V model presents a simplified parameters extraction method, easy to obtain and to implement using computer aide design (CAD) software. The model was validated under DC and transient simulations. The extraction procedure and results are described in the article.",

keywords = "CMOS, FET, Modeling, NMOS, PMOS",

author = "Hirata, \{Francisco I.\} and Muriel Muller and Yang Ni and Claude Gimenes",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ICM.2007.4497728",

language = "English",

isbn = "9781424418473",

series = "Proceedings of the International Conference on Microelectronics, ICM",

pages = "355--358",

booktitle = "Proceedings of the 19th International Conference on Microelectronics, ICM",

note = "19th International Conference on Microelectronics, ICM ; Conference date: 29-12-2007 Through 31-12-2007",

}

Hirata, FI, Muller, M, Ni, Y & Gimenes, C 2007, A new empirical I-V model for NMOS and PMOS transistors. in Proceedings of the 19th International Conference on Microelectronics, ICM., 4497728, Proceedings of the International Conference on Microelectronics, ICM, pp. 355-358, 19th International Conference on Microelectronics, ICM, Cairo, Egypt, 29/12/07. https://doi.org/10.1109/ICM.2007.4497728

A new empirical I-V model for NMOS and PMOS transistors. / Hirata, Francisco I.; Muller, Muriel; Ni, Yang et al.
Proceedings of the 19th International Conference on Microelectronics, ICM. 2007. p. 355-358 4497728 (Proceedings of the International Conference on Microelectronics, ICM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A new empirical I-V model for NMOS and PMOS transistors

AU - Hirata, Francisco I.

AU - Muller, Muriel

AU - Ni, Yang

AU - Gimenes, Claude

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The authors arc with the Department of Electronics and Physics, Institute National of Telecommunications, 91000 Evry, France This paper describes a new empirical model, capable of modeling with high accuracy the current-voltage (I-V) characteristics of metal-oxide semiconductor (MOS) transistors of n-type (nMOS) and p-type (pMOS). The I-V model presents a simplified parameters extraction method, easy to obtain and to implement using computer aide design (CAD) software. The model was validated under DC and transient simulations. The extraction procedure and results are described in the article.

AB - The authors arc with the Department of Electronics and Physics, Institute National of Telecommunications, 91000 Evry, France This paper describes a new empirical model, capable of modeling with high accuracy the current-voltage (I-V) characteristics of metal-oxide semiconductor (MOS) transistors of n-type (nMOS) and p-type (pMOS). The I-V model presents a simplified parameters extraction method, easy to obtain and to implement using computer aide design (CAD) software. The model was validated under DC and transient simulations. The extraction procedure and results are described in the article.

KW - CMOS

KW - FET

KW - Modeling

KW - NMOS

KW - PMOS

U2 - 10.1109/ICM.2007.4497728

DO - 10.1109/ICM.2007.4497728

M3 - Conference contribution

AN - SCOPUS:51849147508

SN - 9781424418473

T3 - Proceedings of the International Conference on Microelectronics, ICM

SP - 355

EP - 358

BT - Proceedings of the 19th International Conference on Microelectronics, ICM

T2 - 19th International Conference on Microelectronics, ICM

Y2 - 29 December 2007 through 31 December 2007

ER -

A new empirical I-V model for NMOS and PMOS transistors

Abstract

Publication series

Conference

Keywords

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