A NEXAFS Study of Thin Polyacrylonitrile Films Electrochemically Deposited on Ni: The Effect of the Film Thickness and Annealing Treatment

Gérard Tourillon; Richard Garrett; Nancy Lazarz; Michèle Raynaud; Cécile Reynaud; Gérard Lécayon; Pascal Viel

doi:10.1149/1.2086975

A NEXAFS Study of Thin Polyacrylonitrile Films Electrochemically Deposited on Ni: The Effect of the Film Thickness and Annealing Treatment

Gérard Tourillon
, Richard Garrett
, Nancy Lazarz
, Michèle Raynaud
, Cécile Reynaud
, Gérard Lécayon
, Pascal Viel

Research output: Contribution to journal › Article › peer-review

Abstract

Polyacrylonitrile (PAN) thin films electrochemically deposited on Ni have been studied by near edge x-ray absorption fine structure, as a function of the film thickness and annealing treatment. For 20Å thick films, the polymer chains are oriented perpendicular to the surface with the C=N groups parallel to it. Below a few angstroms, no polymerization occurs but molecules are adsorbed perpendicular to the surface. Annealing at 300°C results in the loss of the majority part of the N content of the film in contrast with the admitted mechanism for bulk PAN.

Original language	English
Pages (from-to)	2499-2501
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	137
Issue number	8
DOIs	https://doi.org/10.1149/1.2086975
Publication status	Published - 1 Jan 1990
Externally published	Yes

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10.1149/1.2086975

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title = "A NEXAFS Study of Thin Polyacrylonitrile Films Electrochemically Deposited on Ni: The Effect of the Film Thickness and Annealing Treatment",

abstract = "Polyacrylonitrile (PAN) thin films electrochemically deposited on Ni have been studied by near edge x-ray absorption fine structure, as a function of the film thickness and annealing treatment. For 20{\AA} thick films, the polymer chains are oriented perpendicular to the surface with the C=N groups parallel to it. Below a few angstroms, no polymerization occurs but molecules are adsorbed perpendicular to the surface. Annealing at 300°C results in the loss of the majority part of the N content of the film in contrast with the admitted mechanism for bulk PAN.",

author = "G{\'e}rard Tourillon and Richard Garrett and Nancy Lazarz and Mich{\`e}le Raynaud and C{\'e}cile Reynaud and G{\'e}rard L{\'e}cayon and Pascal Viel",

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doi = "10.1149/1.2086975",

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T2 - The Effect of the Film Thickness and Annealing Treatment

AU - Tourillon, Gérard

AU - Garrett, Richard

AU - Lazarz, Nancy

AU - Raynaud, Michèle

AU - Reynaud, Cécile

AU - Lécayon, Gérard

AU - Viel, Pascal

PY - 1990/1/1

Y1 - 1990/1/1

N2 - Polyacrylonitrile (PAN) thin films electrochemically deposited on Ni have been studied by near edge x-ray absorption fine structure, as a function of the film thickness and annealing treatment. For 20Å thick films, the polymer chains are oriented perpendicular to the surface with the C=N groups parallel to it. Below a few angstroms, no polymerization occurs but molecules are adsorbed perpendicular to the surface. Annealing at 300°C results in the loss of the majority part of the N content of the film in contrast with the admitted mechanism for bulk PAN.

AB - Polyacrylonitrile (PAN) thin films electrochemically deposited on Ni have been studied by near edge x-ray absorption fine structure, as a function of the film thickness and annealing treatment. For 20Å thick films, the polymer chains are oriented perpendicular to the surface with the C=N groups parallel to it. Below a few angstroms, no polymerization occurs but molecules are adsorbed perpendicular to the surface. Annealing at 300°C results in the loss of the majority part of the N content of the film in contrast with the admitted mechanism for bulk PAN.

U2 - 10.1149/1.2086975

DO - 10.1149/1.2086975

M3 - Article

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JO - Journal of the Electrochemical Society

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ER -

A NEXAFS Study of Thin Polyacrylonitrile Films Electrochemically Deposited on Ni: The Effect of the Film Thickness and Annealing Treatment

Abstract

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