A novel circuit design of true random number generator using magnetic tunnel junction

You Wang; Hao Cai; Lirida A.B. Naviner; Jacques Olivier Klein; Jianlei Yang; Weisheng Zhao

doi:10.1145/2950067.2950108

A novel circuit design of true random number generator using magnetic tunnel junction

You Wang, Hao Cai, Lirida A.B. Naviner, Jacques Olivier Klein, Jianlei Yang, Weisheng Zhao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Random numbers are widely used in the cryptography and security systems. However, most of the true random number generators (TRNG) which use physical randomness are with high complexity and high power consumption. This paper proposes a new TRNG circuit using magnetic tunnel junction (MTJ). As one of the reliability issues in MTJ based circuit, the stochastic switching behavior provides a perfect physical source of randomness. The functionality of proposed design is validated by transient simulations with 28nm fully depleted silicon-on-insulator (FDSOI) technology and an accurate MTJ compact model. Simulation results show that our design can generate accurate random bitstream stably. The reliability analysis concerning process variation of MTJs and transistors proves the good variability tolerance of our TRNG design. Furthermore, our design can output stable random bitstream around 30 tuning steps.

Original language	English
Title of host publication	Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016
Publisher	Presses Polytechniques Et Universitaires Romandes
Pages	123-128
Number of pages	6
ISBN (Electronic)	9781450343305
DOIs	https://doi.org/10.1145/2950067.2950108
Publication status	Published - 14 Sept 2016
Event	2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016 - Beijing, China Duration: 18 Jul 2016 → 20 Jul 2016

Publication series

Name	Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016

Conference

Conference	2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016
Country/Territory	China
City	Beijing
Period	18/07/16 → 20/07/16

Keywords

FDSOI
magnetic tunnel junction
process variation
stochastic switching
true random number generator

Access to Document

10.1145/2950067.2950108

Cite this

Wang, Y., Cai, H., Naviner, L. A. B., Klein, J. O., Yang, J., & Zhao, W. (2016). A novel circuit design of true random number generator using magnetic tunnel junction. In Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016 (pp. 123-128). Article 7568638 (Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016). Presses Polytechniques Et Universitaires Romandes. https://doi.org/10.1145/2950067.2950108

Wang, You ; Cai, Hao ; Naviner, Lirida A.B. et al. / A novel circuit design of true random number generator using magnetic tunnel junction. Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016. Presses Polytechniques Et Universitaires Romandes, 2016. pp. 123-128 (Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016).

@inproceedings{bb40316f557b42c2b20111de5f1acda3,

title = "A novel circuit design of true random number generator using magnetic tunnel junction",

abstract = "Random numbers are widely used in the cryptography and security systems. However, most of the true random number generators (TRNG) which use physical randomness are with high complexity and high power consumption. This paper proposes a new TRNG circuit using magnetic tunnel junction (MTJ). As one of the reliability issues in MTJ based circuit, the stochastic switching behavior provides a perfect physical source of randomness. The functionality of proposed design is validated by transient simulations with 28nm fully depleted silicon-on-insulator (FDSOI) technology and an accurate MTJ compact model. Simulation results show that our design can generate accurate random bitstream stably. The reliability analysis concerning process variation of MTJs and transistors proves the good variability tolerance of our TRNG design. Furthermore, our design can output stable random bitstream around 30 tuning steps.",

keywords = "FDSOI, magnetic tunnel junction, process variation, stochastic switching, true random number generator",

author = "You Wang and Hao Cai and Naviner, \{Lirida A.B.\} and Klein, \{Jacques Olivier\} and Jianlei Yang and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 2016 ACM.; 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016 ; Conference date: 18-07-2016 Through 20-07-2016",

year = "2016",

month = sep,

day = "14",

doi = "10.1145/2950067.2950108",

language = "English",

series = "Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016",

publisher = "Presses Polytechniques Et Universitaires Romandes",

pages = "123--128",

booktitle = "Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016",

}

Wang, Y, Cai, H, Naviner, LAB, Klein, JO, Yang, J & Zhao, W 2016, A novel circuit design of true random number generator using magnetic tunnel junction. in Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016., 7568638, Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016, Presses Polytechniques Et Universitaires Romandes, pp. 123-128, 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016, Beijing, China, 18/07/16. https://doi.org/10.1145/2950067.2950108

A novel circuit design of true random number generator using magnetic tunnel junction. / Wang, You; Cai, Hao; Naviner, Lirida A.B. et al.
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016. Presses Polytechniques Et Universitaires Romandes, 2016. p. 123-128 7568638 (Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A novel circuit design of true random number generator using magnetic tunnel junction

AU - Wang, You

AU - Cai, Hao

AU - Naviner, Lirida A.B.

AU - Klein, Jacques Olivier

AU - Yang, Jianlei

AU - Zhao, Weisheng

PY - 2016/9/14

Y1 - 2016/9/14

N2 - Random numbers are widely used in the cryptography and security systems. However, most of the true random number generators (TRNG) which use physical randomness are with high complexity and high power consumption. This paper proposes a new TRNG circuit using magnetic tunnel junction (MTJ). As one of the reliability issues in MTJ based circuit, the stochastic switching behavior provides a perfect physical source of randomness. The functionality of proposed design is validated by transient simulations with 28nm fully depleted silicon-on-insulator (FDSOI) technology and an accurate MTJ compact model. Simulation results show that our design can generate accurate random bitstream stably. The reliability analysis concerning process variation of MTJs and transistors proves the good variability tolerance of our TRNG design. Furthermore, our design can output stable random bitstream around 30 tuning steps.

AB - Random numbers are widely used in the cryptography and security systems. However, most of the true random number generators (TRNG) which use physical randomness are with high complexity and high power consumption. This paper proposes a new TRNG circuit using magnetic tunnel junction (MTJ). As one of the reliability issues in MTJ based circuit, the stochastic switching behavior provides a perfect physical source of randomness. The functionality of proposed design is validated by transient simulations with 28nm fully depleted silicon-on-insulator (FDSOI) technology and an accurate MTJ compact model. Simulation results show that our design can generate accurate random bitstream stably. The reliability analysis concerning process variation of MTJs and transistors proves the good variability tolerance of our TRNG design. Furthermore, our design can output stable random bitstream around 30 tuning steps.

KW - FDSOI

KW - magnetic tunnel junction

KW - process variation

KW - stochastic switching

KW - true random number generator

U2 - 10.1145/2950067.2950108

DO - 10.1145/2950067.2950108

M3 - Conference contribution

AN - SCOPUS:84992147527

T3 - Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016

SP - 123

EP - 128

BT - Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016

PB - Presses Polytechniques Et Universitaires Romandes

T2 - 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016

Y2 - 18 July 2016 through 20 July 2016

ER -

Wang Y, Cai H, Naviner LAB, Klein JO, Yang J, Zhao W. A novel circuit design of true random number generator using magnetic tunnel junction. In Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016. Presses Polytechniques Et Universitaires Romandes. 2016. p. 123-128. 7568638. (Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016). doi: 10.1145/2950067.2950108

A novel circuit design of true random number generator using magnetic tunnel junction

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