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A novel method for extracting the linewidth broadening factor of semiconductor lasers

  • Cheng Wang
  • , Kevin Schires
  • , Marek Osiński
  • , Philip J. Poole
  • , Jacky Even
  • , Frédéric Grillot
  • Université Paris-Saclay
  • Université Européenne de Bretagne
  • Center for High Technology Materials
  • University of New Mexico
  • Institute for Microstructural Sciences
  • National Research Council of Canada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A novel experimental technique for extracting the linewidth broadening factor of semiconductor lasers is proposed. This approach is applicable to any types of diode lasers, both below- and above-threshold, and is insensitive to thermal effects.

Original languageEnglish
Title of host publicationProceedings of Frontiers in Optics 2015, FIO 2015
PublisherOSA - The Optical Society
ISBN (Electronic)9781943580033
DOIs
Publication statusPublished - 1 Jan 2015
Externally publishedYes
EventFrontiers in Optics 2015, FIO 2015 - San Jose, United States
Duration: 18 Oct 2015 → 22 Oct 2015

Publication series

NameProceedings of Frontiers in Optics 2015, FIO 2015

Conference

ConferenceFrontiers in Optics 2015, FIO 2015
Country/TerritoryUnited States
CitySan Jose
Period18/10/15 → 22/10/15

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