A Reassessment of Standard Rate Equations for Low Facet Reflectivity Semiconductor Lasers Using Traveling Wave Rate Equations

Bruno J. Thedrez; Chi H. Lee

doi:10.1109/3.166463

A Reassessment of Standard Rate Equations for Low Facet Reflectivity Semiconductor Lasers Using Traveling Wave Rate Equations

Bruno J. Thedrez, Chi H. Lee

University of Maryland, College Park

Research output: Contribution to journal › Article › peer-review

Abstract

A set of traveling wave equations, which are a simple extension of the common rate equations, is used to study the effect of longitudinal gain saturation in Fabry-Perot semiconductor lasers. Analytical solutions are derived which are valid for both low and high Q cavities. A comparison is made to a theory with no spatial dependence. The maximum longitudinal carrier density deviation from the threshold value under lasing condition is calculated for arbitrary facet reflectivities. It is shown that this deviation leads to new linear equations for the emitted output power when compared to a standard rate equation theory. Finally, improved designs for semiconductor lasers are suggested from this analysis.

Original language	English
Pages (from-to)	2706-2713
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	28
Issue number	12
DOIs	https://doi.org/10.1109/3.166463
Publication status	Published - 1 Jan 1992
Externally published	Yes

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abstract = "A set of traveling wave equations, which are a simple extension of the common rate equations, is used to study the effect of longitudinal gain saturation in Fabry-Perot semiconductor lasers. Analytical solutions are derived which are valid for both low and high Q cavities. A comparison is made to a theory with no spatial dependence. The maximum longitudinal carrier density deviation from the threshold value under lasing condition is calculated for arbitrary facet reflectivities. It is shown that this deviation leads to new linear equations for the emitted output power when compared to a standard rate equation theory. Finally, improved designs for semiconductor lasers are suggested from this analysis.",

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N2 - A set of traveling wave equations, which are a simple extension of the common rate equations, is used to study the effect of longitudinal gain saturation in Fabry-Perot semiconductor lasers. Analytical solutions are derived which are valid for both low and high Q cavities. A comparison is made to a theory with no spatial dependence. The maximum longitudinal carrier density deviation from the threshold value under lasing condition is calculated for arbitrary facet reflectivities. It is shown that this deviation leads to new linear equations for the emitted output power when compared to a standard rate equation theory. Finally, improved designs for semiconductor lasers are suggested from this analysis.

AB - A set of traveling wave equations, which are a simple extension of the common rate equations, is used to study the effect of longitudinal gain saturation in Fabry-Perot semiconductor lasers. Analytical solutions are derived which are valid for both low and high Q cavities. A comparison is made to a theory with no spatial dependence. The maximum longitudinal carrier density deviation from the threshold value under lasing condition is calculated for arbitrary facet reflectivities. It is shown that this deviation leads to new linear equations for the emitted output power when compared to a standard rate equation theory. Finally, improved designs for semiconductor lasers are suggested from this analysis.

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JO - IEEE Journal of Quantum Electronics

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ER -

A Reassessment of Standard Rate Equations for Low Facet Reflectivity Semiconductor Lasers Using Traveling Wave Rate Equations

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