A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd0.2Hg0.8Te

C. Gely; C. Corbel; R. Triboulet

doi:10.1088/0953-8984/2/21/011

A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd_0.2Hg_0.8Te

C. Gely
, C. Corbel
, R. Triboulet

Institut National des Sciences et Techniques Nucléaires

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Positron lifetime measurements in Cd_0.2Hg_0.8Te give direct evidence of the presence of monovacancies in samples annealed under Hg atmosphere. A single lifetime of pi =309 ps is detected and attributed to a monovacancy. It is proposed to be the doubly ionised mercury vacancy. Measurements in the 15-300 K temperature range show no charge state transition.

Original language	English
Article number	011
Pages (from-to)	4763-4767
Number of pages	5
Journal	Journal of Physics: Condensed Matter
Volume	2
Issue number	21
DOIs	https://doi.org/10.1088/0953-8984/2/21/011
Publication status	Published - 1 Dec 1990
Externally published	Yes

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10.1088/0953-8984/2/21/011

Cite this

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title = "A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd0.2Hg0.8Te",

abstract = "Positron lifetime measurements in Cd0.2Hg0.8Te give direct evidence of the presence of monovacancies in samples annealed under Hg atmosphere. A single lifetime of pi =309 ps is detected and attributed to a monovacancy. It is proposed to be the doubly ionised mercury vacancy. Measurements in the 15-300 K temperature range show no charge state transition.",

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AU - Corbel, C.

AU - Triboulet, R.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - Positron lifetime measurements in Cd0.2Hg0.8Te give direct evidence of the presence of monovacancies in samples annealed under Hg atmosphere. A single lifetime of pi =309 ps is detected and attributed to a monovacancy. It is proposed to be the doubly ionised mercury vacancy. Measurements in the 15-300 K temperature range show no charge state transition.

AB - Positron lifetime measurements in Cd0.2Hg0.8Te give direct evidence of the presence of monovacancies in samples annealed under Hg atmosphere. A single lifetime of pi =309 ps is detected and attributed to a monovacancy. It is proposed to be the doubly ionised mercury vacancy. Measurements in the 15-300 K temperature range show no charge state transition.

U2 - 10.1088/0953-8984/2/21/011

DO - 10.1088/0953-8984/2/21/011

M3 - Article

AN - SCOPUS:0004597890

SN - 0953-8984

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JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

IS - 21

M1 - 011

ER -

A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd0.2Hg0.8Te

Abstract

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A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd_0.2Hg_0.8Te