A synchrotron Si2p and As3d core level study of the As-terminated Si(001) surface oxidation

C. Poncey; F. Rochet; G. Dufour; H. Roulet; W. N. Rodrigues; M. Sauvage-Simkin; J. C. Boulliard; F. Sirotti; G. Panaccione

doi:10.1016/0022-3093(95)00108-5

A synchrotron Si2p and As3d core level study of the As-terminated Si(001) surface oxidation

C. Poncey, F. Rochet, G. Dufour, H. Roulet, W. N. Rodrigues, M. Sauvage-Simkin, J. C. Boulliard, F. Sirotti, G. Panaccione

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Abstract

The resistance of the As-terminated Si(001) surface to oxidation in O₂ is the subject of this study. Photoemission spectra of As3d and Si2p core levels excited with synchrotron radiation reveals that spectral changes are evident, simultaneously for As and Si, only from ∼10¹² L (Langmuir) on, in stark contrast with a previous report indicating a saturation coverage in the 400–2000 L range. Oxidation proceeds slowly, as dimerized As remain intact (∼24%) up to exposures of ∼10¹³ L. In the oxidized areas, the four Si oxidation states (indicative of subsurface oxidation) and three As oxidation states plus metallic arsenic show up. This suggests a reduction of the arsenic oxide by silicon. Arsenic losses are also observed, probably via sublimation of As₄O₆ molecules.

Original language	English
Pages (from-to)	40-44
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	187
DOIs	https://doi.org/10.1016/0022-3093(95)00108-5
Publication status	Published - 1 Jan 1995
Externally published	Yes

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title = "A synchrotron Si2p and As3d core level study of the As-terminated Si(001) surface oxidation",

abstract = "The resistance of the As-terminated Si(001) surface to oxidation in O2 is the subject of this study. Photoemission spectra of As3d and Si2p core levels excited with synchrotron radiation reveals that spectral changes are evident, simultaneously for As and Si, only from ∼1012 L (Langmuir) on, in stark contrast with a previous report indicating a saturation coverage in the 400–2000 L range. Oxidation proceeds slowly, as dimerized As remain intact (∼24\%) up to exposures of ∼1013 L. In the oxidized areas, the four Si oxidation states (indicative of subsurface oxidation) and three As oxidation states plus metallic arsenic show up. This suggests a reduction of the arsenic oxide by silicon. Arsenic losses are also observed, probably via sublimation of As4O6 molecules.",

author = "C. Poncey and F. Rochet and G. Dufour and H. Roulet and Rodrigues, \{W. N.\} and M. Sauvage-Simkin and Boulliard, \{J. C.\} and F. Sirotti and G. Panaccione",

year = "1995",

month = jan,

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doi = "10.1016/0022-3093(95)00108-5",

language = "English",

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journal = "Journal of Non-Crystalline Solids",

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TY - JOUR

T1 - A synchrotron Si2p and As3d core level study of the As-terminated Si(001) surface oxidation

AU - Poncey, C.

AU - Rochet, F.

AU - Dufour, G.

AU - Roulet, H.

AU - Rodrigues, W. N.

AU - Sauvage-Simkin, M.

AU - Boulliard, J. C.

AU - Sirotti, F.

AU - Panaccione, G.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The resistance of the As-terminated Si(001) surface to oxidation in O2 is the subject of this study. Photoemission spectra of As3d and Si2p core levels excited with synchrotron radiation reveals that spectral changes are evident, simultaneously for As and Si, only from ∼1012 L (Langmuir) on, in stark contrast with a previous report indicating a saturation coverage in the 400–2000 L range. Oxidation proceeds slowly, as dimerized As remain intact (∼24%) up to exposures of ∼1013 L. In the oxidized areas, the four Si oxidation states (indicative of subsurface oxidation) and three As oxidation states plus metallic arsenic show up. This suggests a reduction of the arsenic oxide by silicon. Arsenic losses are also observed, probably via sublimation of As4O6 molecules.

AB - The resistance of the As-terminated Si(001) surface to oxidation in O2 is the subject of this study. Photoemission spectra of As3d and Si2p core levels excited with synchrotron radiation reveals that spectral changes are evident, simultaneously for As and Si, only from ∼1012 L (Langmuir) on, in stark contrast with a previous report indicating a saturation coverage in the 400–2000 L range. Oxidation proceeds slowly, as dimerized As remain intact (∼24%) up to exposures of ∼1013 L. In the oxidized areas, the four Si oxidation states (indicative of subsurface oxidation) and three As oxidation states plus metallic arsenic show up. This suggests a reduction of the arsenic oxide by silicon. Arsenic losses are also observed, probably via sublimation of As4O6 molecules.

U2 - 10.1016/0022-3093(95)00108-5

DO - 10.1016/0022-3093(95)00108-5

M3 - Article

AN - SCOPUS:85024632296

SN - 0022-3093

VL - 187

SP - 40

EP - 44

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

A synchrotron Si2p and As3d core level study of the As-terminated Si(001) surface oxidation

Abstract

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