Abstract
An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle band structure calculation and is based on the relevant Bethe-Salpeter equation. An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and line shape.
| Original language | English |
|---|---|
| Pages (from-to) | 4510-4513 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 80 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 1 Jan 1998 |