Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift

Elena Degoli; G. Cantele; Eleonora Luppi; Rita Magri; Stefano Ossicini; D. Ninno; O. Bisi; G. Onida; M. Gatti; A. Incze; O. Pulci; R. Del Sole

doi:10.1063/1.1994377

Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift

Elena Degoli
, G. Cantele
, Eleonora Luppi
, Rita Magri
, Stefano Ossicini
, D. Ninno
, O. Bisi
, G. Onida
, M. Gatti
, A. Incze
, O. Pulci
, R. Del Sole

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The structural, optical and electronic properties of silicon nanocrystals are investigated as a function of the dimension as well as the surface passivation. Both the ground- and an excited-state configuration are studied using ab-initio calculations. Atom relaxation under excitation is taken into account and related with the experimentally observed Stokes shift.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	859-860
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994377
Publication status	Published - 30 Jun 2005
Externally published	Yes
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	26/07/04 → 30/07/04

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10.1063/1.1994377

Cite this

Degoli, E., Cantele, G., Luppi, E., Magri, R., Ossicini, S., Ninno, D., Bisi, O., Onida, G., Gatti, M., Incze, A., Pulci, O., & Del Sole, R. (2005). Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 859-860). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994377

@inproceedings{2769c71c4c1643fbb8c4830dcf950ba7,

title = "Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift",

abstract = "The structural, optical and electronic properties of silicon nanocrystals are investigated as a function of the dimension as well as the surface passivation. Both the ground- and an excited-state configuration are studied using ab-initio calculations. Atom relaxation under excitation is taken into account and related with the experimentally observed Stokes shift.",

author = "Elena Degoli and G. Cantele and Eleonora Luppi and Rita Magri and Stefano Ossicini and D. Ninno and O. Bisi and G. Onida and M. Gatti and A. Incze and O. Pulci and \{Del Sole\}, R.",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994377",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "859--860",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Degoli, E, Cantele, G, Luppi, E, Magri, R, Ossicini, S, Ninno, D, Bisi, O, Onida, G, Gatti, M, Incze, A, Pulci, O & Del Sole, R 2005, Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 859-860, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994377

Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift. / Degoli, Elena; Cantele, G.; Luppi, Eleonora et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 859-860 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ab-initio calculations of the electronic properties of silicon nanocrystals

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

AU - Degoli, Elena

AU - Cantele, G.

AU - Luppi, Eleonora

AU - Magri, Rita

AU - Ossicini, Stefano

AU - Ninno, D.

AU - Bisi, O.

AU - Onida, G.

AU - Gatti, M.

AU - Incze, A.

AU - Pulci, O.

AU - Del Sole, R.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - The structural, optical and electronic properties of silicon nanocrystals are investigated as a function of the dimension as well as the surface passivation. Both the ground- and an excited-state configuration are studied using ab-initio calculations. Atom relaxation under excitation is taken into account and related with the experimentally observed Stokes shift.

AB - The structural, optical and electronic properties of silicon nanocrystals are investigated as a function of the dimension as well as the surface passivation. Both the ground- and an excited-state configuration are studied using ab-initio calculations. Atom relaxation under excitation is taken into account and related with the experimentally observed Stokes shift.

U2 - 10.1063/1.1994377

DO - 10.1063/1.1994377

M3 - Conference contribution

AN - SCOPUS:33749482815

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 859

EP - 860

BT - PHYSICS OF SEMICONDUCTORS

Y2 - 26 July 2004 through 30 July 2004

ER -

Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift

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