Ab initio quantum chemical studies of hydrogen and halogen migration on the diamond (110) surface

  • M. S. Melnik
  • , D. G. Goodwin
  • , W. A. Goddard

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Activation energies for the migrations of H,F, and Cl on the diamond C(110) surface are calculated by quantum chemical methods using hydrocarbon cluster models. The calculations include extensive basis sets with many-body effects at the level of single and double excitations from Hartree-Fock and Complete-Active-Space wavefunctions. The calculated activation barriers for the (1,2) and (1,3) migrations indicate that such migrations are too slow to complete with gas-surface reactions during chemical-vapor deposition of diamond. However, the (1,4) migrations of both H and Cl are calculated to be sufficiently fast to complete with gas-surface reactions under typical diamond growth conditions.

Original languageEnglish
Title of host publicationMechanisms of Thin Film Evolution
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Pages349-354
Number of pages6
ISBN (Print)1558992162
Publication statusPublished - 1 Jan 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 29 Nov 19932 Dec 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume317
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period29/11/932/12/93

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