Abstract
The generalized Planck's law describes the light emitted by a blackbody. In the past this law has been generalized to semiconductors. Whereas Planck's orginial formulation roots on a same temperature between the body and the emitted photon gas, the generalized expression for semiconductors has been used to describe electron-hole plasmas in non-equilibrium with the lattice. Here we show experimentally how to determine different electron and hole temperatures in non-equilibrium with the photon gas. Since the absorption coefficient varies with the carrier density and is part of the generalize Planck's law, we particularly emphasize the importance of the absorption coefficient in the analysis of hot carrier photoluminescence spectra.
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-3 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| Publication status | Published - 1 Jan 2017 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 |
Publication series
| Name | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
|---|
Conference
| Conference | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country/Territory | United States |
| City | Washington |
| Period | 25/06/17 → 30/06/17 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Hot carrier photoluminescence
- Hot carrier solar cells
- Non-equilibrium electron and hole distributions
- Non-equilibrium generalized Planck's law
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