Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy

Francois Gibelli, Laurent Lombez, Jean Francois Guillemoles

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The generalized Planck's law describes the light emitted by a blackbody. In the past this law has been generalized to semiconductors. Whereas Planck's orginial formulation roots on a same temperature between the body and the emitted photon gas, the generalized expression for semiconductors has been used to describe electron-hole plasmas in non-equilibrium with the lattice. Here we show experimentally how to determine different electron and hole temperatures in non-equilibrium with the photon gas. Since the absorption coefficient varies with the carrier density and is part of the generalize Planck's law, we particularly emphasize the importance of the absorption coefficient in the analysis of hot carrier photoluminescence spectra.

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509056057
DOIs
Publication statusPublished - 1 Jan 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 25 Jun 201730 Jun 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/TerritoryUnited States
CityWashington
Period25/06/1730/06/17

Keywords

  • Hot carrier photoluminescence
  • Hot carrier solar cells
  • Non-equilibrium electron and hole distributions
  • Non-equilibrium generalized Planck's law

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