Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The generalized Planck's law describes the light emitted by a blackbody. In the past this law has been generalized to semiconductors. Whereas Planck's orginial formulation roots on a same temperature between the body and the emitted photon gas, the generalized expression for semiconductors has been used to describe electron-hole plasmas in non-equilibrium with the lattice. Here we show experimentally how to determine different electron and hole temperatures in non-equilibrium with the photon gas. Since the absorption coefficient varies with the carrier density and is part of the generalize Planck's law, we particularly emphasize the importance of the absorption coefficient in the analysis of hot carrier photoluminescence spectra.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3567-3569
Number of pages3
ISBN (Electronic)9781509027248
DOIs
Publication statusPublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 201610 Jun 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States
CityPortland
Period5/06/1610/06/16

Keywords

  • hot carrier photoluminescence
  • hot carrier solar cells
  • non-equilibrium electron and hole distributions
  • non-equilibrium generalized Planck's law

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