Abstract
Non‐equilibrium carrier distributions are studied in GaAs by monitoring the induced bleaching in femtosecond pump–probe experiments. Unchirped pump pulses are required in order to avoid asymmetrical coherence oscillations. The observation of an induced absorption on the high‐energy side of the hole burning is explained in terms of absorption edge singularities, emphasizing the importance of many‐body effects in highly excited semiconductors.
| Original language | English |
|---|---|
| Pages (from-to) | 281-290 |
| Number of pages | 10 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 173 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1992 |