Absorption edge singularities in highly excited semiconductors

J. P. Foing; D. Hulin; M. Joffre; M. K. Jackson; J. L. Oudar; C. Tanguy; M. Combescot

doi:10.1103/PhysRevLett.68.110

Absorption edge singularities in highly excited semiconductors

J. P. Foing
, D. Hulin
, M. Joffre
, M. K. Jackson
, J. L. Oudar
, C. Tanguy
, M. Combescot

Laboratoire d’Optique Appliquée
Laboratory d'Optique Appliquée, ENSTA, CNRS-École Polytechnique
Groupe de Physique des Solides
Sorbonne Université
Orange Labs

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

We report the observation of an induced absorption on the high-energy side of spectral hole burning in band-to-band transitions in GaAs. This effect appears in the early stage of photoexcitation by an intense femtosecond pump pulse. This feature can be explained by edge singularities in the presence of a nonequilibrium Fermi sea.

Original language	English
Pages (from-to)	110-113
Number of pages	4
Journal	Physical Review Letters
Volume	68
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.68.110
Publication status	Published - 1 Jan 1992

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title = "Absorption edge singularities in highly excited semiconductors",

abstract = "We report the observation of an induced absorption on the high-energy side of spectral hole burning in band-to-band transitions in GaAs. This effect appears in the early stage of photoexcitation by an intense femtosecond pump pulse. This feature can be explained by edge singularities in the presence of a nonequilibrium Fermi sea.",

author = "Foing, \{J. P.\} and D. Hulin and M. Joffre and Jackson, \{M. K.\} and Oudar, \{J. L.\} and C. Tanguy and M. Combescot",

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AU - Foing, J. P.

AU - Hulin, D.

AU - Joffre, M.

AU - Jackson, M. K.

AU - Oudar, J. L.

AU - Tanguy, C.

AU - Combescot, M.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - We report the observation of an induced absorption on the high-energy side of spectral hole burning in band-to-band transitions in GaAs. This effect appears in the early stage of photoexcitation by an intense femtosecond pump pulse. This feature can be explained by edge singularities in the presence of a nonequilibrium Fermi sea.

AB - We report the observation of an induced absorption on the high-energy side of spectral hole burning in band-to-band transitions in GaAs. This effect appears in the early stage of photoexcitation by an intense femtosecond pump pulse. This feature can be explained by edge singularities in the presence of a nonequilibrium Fermi sea.

U2 - 10.1103/PhysRevLett.68.110

DO - 10.1103/PhysRevLett.68.110

M3 - Article

AN - SCOPUS:0000864887

SN - 0031-9007

VL - 68

SP - 110

EP - 113

JO - Physical Review Letters

JF - Physical Review Letters

IS - 1

ER -

Absorption edge singularities in highly excited semiconductors

Abstract

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