Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

B. Behaghel; R. Tamaki; N. Vandamme; K. Watanabe; C. Dupuis; N. Bardou; H. Sodabanlu; A. Cattoni; Y. Okada; M. Sugiyama; S. Collin; J. F. Guillemoles

doi:10.1063/1.4913469

Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

B. Behaghel
, R. Tamaki
, N. Vandamme
, K. Watanabe
, C. Dupuis
, N. Bardou
, H. Sodabanlu
, A. Cattoni
, Y. Okada
, M. Sugiyama
, S. Collin
, J. F. Guillemoles

Centre de Nanosciences et de Nanotechnologies
Institut Photovoltaïque d'Ile-de-France
Tokyo University
University of Tokyo

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

Original language	English
Article number	081107
Journal	Applied Physics Letters
Volume	106
Issue number	8
DOIs	https://doi.org/10.1063/1.4913469
Publication status	Published - 23 Feb 2015

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10.1063/1.4913469

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Behaghel, B., Tamaki, R., Vandamme, N., Watanabe, K., Dupuis, C., Bardou, N., Sodabanlu, H., Cattoni, A., Okada, Y., Sugiyama, M., Collin, S., & Guillemoles, J. F. (2015). Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell. Applied Physics Letters, 106(8), Article 081107. https://doi.org/10.1063/1.4913469

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title = "Absorption enhancement through Fabry-P{\'e}rot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell",

abstract = "We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10\% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.",

author = "B. Behaghel and R. Tamaki and N. Vandamme and K. Watanabe and C. Dupuis and N. Bardou and H. Sodabanlu and A. Cattoni and Y. Okada and M. Sugiyama and S. Collin and Guillemoles, \{J. F.\}",

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T1 - Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

AU - Behaghel, B.

AU - Tamaki, R.

AU - Vandamme, N.

AU - Watanabe, K.

AU - Dupuis, C.

AU - Bardou, N.

AU - Sodabanlu, H.

AU - Cattoni, A.

AU - Okada, Y.

AU - Sugiyama, M.

AU - Collin, S.

AU - Guillemoles, J. F.

PY - 2015/2/23

Y1 - 2015/2/23

N2 - We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

AB - We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

U2 - 10.1063/1.4913469

DO - 10.1063/1.4913469

M3 - Article

AN - SCOPUS:84923873088

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081107

ER -

Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

Abstract

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