Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

B. Behaghel, R. Tamaki, N. Vandamme, K. Watanabe, C. Dupuis, N. Bardou, H. Sodabanlu, A. Cattoni, Y. Okada, M. Sugiyama, S. Collin, J. F. Guillemoles

Research output: Contribution to journalArticlepeer-review

Abstract

We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

Original languageEnglish
Article number081107
JournalApplied Physics Letters
Volume106
Issue number8
DOIs
Publication statusPublished - 23 Feb 2015

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