Abstract
We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.
| Original language | English |
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| Article number | 081107 |
| Journal | Applied Physics Letters |
| Volume | 106 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 23 Feb 2015 |