Abstract
The Peierls stress for a [111]-screw dislocation in bcc Tantalum is calculated using an embedded atom potential. More importantly, a method is presented which allows accurate calculations of the Peierls stress in the smallest periodic cells. This method can be easily applied to ab initio calculations, where only the smallest unit cells capable of containing a dislocation can be conviently used. The calculation specifically focuses on the case where the maximum resolved shear stress is along a {110}-plane.
| Original language | English |
|---|---|
| Pages (from-to) | 161-172 |
| Number of pages | 12 |
| Journal | Journal of Computer-Aided Materials Design |
| Volume | 8 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 1 Dec 2001 |
| Externally published | Yes |
| Event | 3rd Annual Caltech ASCI/ASAP Center materials Properties Workshop - Urbana, IL, United States Duration: 24 Jan 2001 → 25 Jan 2001 |
Keywords
- Ab initio
- Boundary conditions
- Dislocation
- Peierls stress
- Tantalum
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