@inproceedings{8f8b56185ebb4be9a9ad1d49a8cad0d6,
title = "Accurate measurement of temperature and electrochemical potential of InGaAsP/InP heterostructures: A first indication of hot carriers solar cell operation",
abstract = "We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells using optical and electrical characterizations. The optical analysis allows us to probe the potential of such a structure in the scope of hot carrier solar cell device. Using different photoluminescence techniques, the quasi Fermi level splitting Δμ and the carrier temperature is estimated as a function of the excitation power. Both values are measured at the quantum wells and at the barrier emission energy. High values of Δμ is found as well as high carrier temperature showing the capability of this structure to work as Hot Carrier Solar cell absorber. Δμ measured in the barrier energy region exceeds the minimum absorption threshold. This fact evidences the potential quantum wells structure to overcome the Schockley Queisser limit.",
keywords = "Characterization, Hot Carriers, Quasi Fermi level splitting",
author = "Laurent Lombez and Jean Rodiere and Guillemoles, \{Jean Francois\} and Herve Folliot and Alain Lecore and Olivier Durand",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925667",
language = "English",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3425--3427",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
}