Addition of SiF4 to standard SiH4+H2 plasma: An effective way to reduce oxygen contamination in μc-Si:H films

Alexey Abramov; Pere Roca I Cabarrocas

doi:10.1002/pssc.200982798

Addition of SiF₄ to standard SiH₄+H₂ plasma: An effective way to reduce oxygen contamination in μc-Si:H films

Alexey Abramov
, Pere Roca I Cabarrocas

Institut polytechnique de Paris

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

The effect of adding of silicon tetrafluoride (SiF₄) to silane (SiH₄) hydrogen gas mixture on the properties of highly crystallized microcrystalline silicon (μc-Si:H) films was studied. We found that the addition of a small amount of SiF₄, with a ratio to SiH₄ not exceeding 1/10, has almost no effect on deposition rate and does not affect the structure of the μc-Si:H films, but strongly reduces oxygen incorporation into the films. Reduction of oxygen content to values below 1019 cm ^-3 results in intrinsic character of the films with ratio of photo to dark conductivity about 103 in whole studied range of deposition temperatures from 175 to 250 ° C in contrast to films, deposited without SiF₄ addition, which show strong decrease of photosensitivity with increase of deposition temperature above 200 ° C.

Original language	English
Pages (from-to)	529-532
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.200982798
Publication status	Published - 27 May 2010
Event	23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands Duration: 23 Aug 2009 → 28 Aug 2009

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title = "Addition of SiF4 to standard SiH4+H2 plasma: An effective way to reduce oxygen contamination in μc-Si:H films",

abstract = "The effect of adding of silicon tetrafluoride (SiF4) to silane (SiH4) hydrogen gas mixture on the properties of highly crystallized microcrystalline silicon (μc-Si:H) films was studied. We found that the addition of a small amount of SiF4, with a ratio to SiH4 not exceeding 1/10, has almost no effect on deposition rate and does not affect the structure of the μc-Si:H films, but strongly reduces oxygen incorporation into the films. Reduction of oxygen content to values below 1019 cm -3 results in intrinsic character of the films with ratio of photo to dark conductivity about 103 in whole studied range of deposition temperatures from 175 to 250 ° C in contrast to films, deposited without SiF4 addition, which show strong decrease of photosensitivity with increase of deposition temperature above 200 ° C.",

author = "Alexey Abramov and \{Roca I Cabarrocas\}, Pere",

year = "2010",

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language = "English",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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publisher = "Wiley-VCH Verlag",

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T1 - Addition of SiF4 to standard SiH4+H2 plasma

T2 - 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23

AU - Abramov, Alexey

AU - Roca I Cabarrocas, Pere

PY - 2010/5/27

Y1 - 2010/5/27

N2 - The effect of adding of silicon tetrafluoride (SiF4) to silane (SiH4) hydrogen gas mixture on the properties of highly crystallized microcrystalline silicon (μc-Si:H) films was studied. We found that the addition of a small amount of SiF4, with a ratio to SiH4 not exceeding 1/10, has almost no effect on deposition rate and does not affect the structure of the μc-Si:H films, but strongly reduces oxygen incorporation into the films. Reduction of oxygen content to values below 1019 cm -3 results in intrinsic character of the films with ratio of photo to dark conductivity about 103 in whole studied range of deposition temperatures from 175 to 250 ° C in contrast to films, deposited without SiF4 addition, which show strong decrease of photosensitivity with increase of deposition temperature above 200 ° C.

AB - The effect of adding of silicon tetrafluoride (SiF4) to silane (SiH4) hydrogen gas mixture on the properties of highly crystallized microcrystalline silicon (μc-Si:H) films was studied. We found that the addition of a small amount of SiF4, with a ratio to SiH4 not exceeding 1/10, has almost no effect on deposition rate and does not affect the structure of the μc-Si:H films, but strongly reduces oxygen incorporation into the films. Reduction of oxygen content to values below 1019 cm -3 results in intrinsic character of the films with ratio of photo to dark conductivity about 103 in whole studied range of deposition temperatures from 175 to 250 ° C in contrast to films, deposited without SiF4 addition, which show strong decrease of photosensitivity with increase of deposition temperature above 200 ° C.

U2 - 10.1002/pssc.200982798

DO - 10.1002/pssc.200982798

M3 - Conference article

AN - SCOPUS:77952573676

SN - 1862-6351

VL - 7

SP - 529

EP - 532

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

Y2 - 23 August 2009 through 28 August 2009

ER -

Addition of SiF4 to standard SiH4+H2 plasma: An effective way to reduce oxygen contamination in μc-Si:H films

Abstract

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Addition of SiF₄ to standard SiH₄+H₂ plasma: An effective way to reduce oxygen contamination in μc-Si:H films