Admittance spectroscopy defect density of electrodeposited CuIn(S,Se) 2 and its correlation with solar cells performances

A. Darga; Z. Djebbour; D. Mencaraglia; A. Migan Dubois; J. P. Connolly; J. F. Guillemoles; D. Lincot

doi:10.1002/pssc.200779437

Admittance spectroscopy defect density of electrodeposited CuIn(S,Se) ₂ and its correlation with solar cells performances

A. Darga
, Z. Djebbour
, D. Mencaraglia
, A. Migan Dubois
, J. P. Connolly
, J. F. Guillemoles
, D. Lincot

Laboratoire de Génie Electrique de Paris (LGEP, UMR 8507 CNRS)
Université Paris-Sud 11
Département de Physique
Université Versailles-Saint Quentin
Imperial College London
Centre national de la recherche scientifique

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Electrodeposited CuIn(S,Se)₂ based solar cells with varying CdS buffer layer thicknesses were studied by admittance spectroscopy. An electrically active defect was identified. Its density of states which varies with CdS layer deposition process was found to be correlated with solar cell performance. This defect seems to be CdS/CuIn(S,Se)₂ interface defect or to be located within the grain boundaries of the absorber layer. Direct dark I-V measurements reveal that the dominant recombination mechanism is a tunnelling assisted process.

Original language	English
Pages (from-to)	3449-3452
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	11
DOIs	https://doi.org/10.1002/pssc.200779437
Publication status	Published - 1 Dec 2008
Event	2007 E-MRS Fall Meeting Symposium B: Chemical and Electrochemical Synthesis of Advanced Materials and Nanostructures on Solid Surfaces: Growth Mechanisms, Characterizations and Applications - Warsaw, Poland Duration: 17 Sept 2007 → 21 Sept 2007

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title = "Admittance spectroscopy defect density of electrodeposited CuIn(S,Se) 2 and its correlation with solar cells performances",

abstract = "Electrodeposited CuIn(S,Se)2 based solar cells with varying CdS buffer layer thicknesses were studied by admittance spectroscopy. An electrically active defect was identified. Its density of states which varies with CdS layer deposition process was found to be correlated with solar cell performance. This defect seems to be CdS/CuIn(S,Se)2 interface defect or to be located within the grain boundaries of the absorber layer. Direct dark I-V measurements reveal that the dominant recombination mechanism is a tunnelling assisted process.",

author = "A. Darga and Z. Djebbour and D. Mencaraglia and \{Migan Dubois\}, A. and Connolly, \{J. P.\} and Guillemoles, \{J. F.\} and D. Lincot",

year = "2008",

month = dec,

day = "1",

doi = "10.1002/pssc.200779437",

language = "English",

volume = "5",

pages = "3449--3452",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "11",

note = "2007 E-MRS Fall Meeting Symposium B: Chemical and Electrochemical Synthesis of Advanced Materials and Nanostructures on Solid Surfaces: Growth Mechanisms, Characterizations and Applications ; Conference date: 17-09-2007 Through 21-09-2007",

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TY - JOUR

T1 - Admittance spectroscopy defect density of electrodeposited CuIn(S,Se) 2 and its correlation with solar cells performances

AU - Darga, A.

AU - Djebbour, Z.

AU - Mencaraglia, D.

AU - Migan Dubois, A.

AU - Connolly, J. P.

AU - Guillemoles, J. F.

AU - Lincot, D.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Electrodeposited CuIn(S,Se)2 based solar cells with varying CdS buffer layer thicknesses were studied by admittance spectroscopy. An electrically active defect was identified. Its density of states which varies with CdS layer deposition process was found to be correlated with solar cell performance. This defect seems to be CdS/CuIn(S,Se)2 interface defect or to be located within the grain boundaries of the absorber layer. Direct dark I-V measurements reveal that the dominant recombination mechanism is a tunnelling assisted process.

AB - Electrodeposited CuIn(S,Se)2 based solar cells with varying CdS buffer layer thicknesses were studied by admittance spectroscopy. An electrically active defect was identified. Its density of states which varies with CdS layer deposition process was found to be correlated with solar cell performance. This defect seems to be CdS/CuIn(S,Se)2 interface defect or to be located within the grain boundaries of the absorber layer. Direct dark I-V measurements reveal that the dominant recombination mechanism is a tunnelling assisted process.

U2 - 10.1002/pssc.200779437

DO - 10.1002/pssc.200779437

M3 - Conference article

AN - SCOPUS:77951180027

SN - 1862-6351

VL - 5

SP - 3449

EP - 3452

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 11

T2 - 2007 E-MRS Fall Meeting Symposium B: Chemical and Electrochemical Synthesis of Advanced Materials and Nanostructures on Solid Surfaces: Growth Mechanisms, Characterizations and Applications

Y2 - 17 September 2007 through 21 September 2007

ER -

Admittance spectroscopy defect density of electrodeposited CuIn(S,Se) 2 and its correlation with solar cells performances

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Admittance spectroscopy defect density of electrodeposited CuIn(S,Se) ₂ and its correlation with solar cells performances