Advanced analysis for hot-carriers photoluminescence spectrum

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Photoluminescence spectroscopy is a powerful technique to investigate the properties of photo-generated hot carriers in materials in steady state conditions. Hot carrier temperature can be determined via fitting the emitted PL spectrum with the generalized Planck's law. However, this analysis is not trivial, especially for nanostructured materials, such as quantum wells, with a modified density of states due to quantum confinement effects. Here, we present comprehensively different methods to determine carrier temperature via fitting the emitted PL spectrum with the generalized Planck's law and discuss under what conditions it is possible to simplify the analysis.

Original languageEnglish
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices IX
EditorsAlexandre Freundlich, Masakazu Sugiyama, Stephane Collin
PublisherSPIE
ISBN (Electronic)9781510633131
DOIs
Publication statusPublished - 1 Jan 2020
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices IX 2020 - San Francisco, United States
Duration: 4 Feb 20206 Feb 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11275
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysics, Simulation, and Photonic Engineering of Photovoltaic Devices IX 2020
Country/TerritoryUnited States
CitySan Francisco
Period4/02/206/02/20

Keywords

  • Carrier temperature
  • Generalized planck's law
  • Hot carrier
  • Photoluminescence
  • Quantum well structure

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