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Advances in Compact Modeling of Organic Field-Effect Transistors

  • Sungyeop Jung
  • , Yvan Bonnassieux
  • , Gilles Horowitz
  • , Sungjune Jung
  • , Benjamin Iniguez
  • , Chang Hyun Kim
  • Pohang University of Science and Technology
  • Seoul National University
  • Centre national de la recherche scientifique
  • Universitat Rovira i Virgili
  • Gachon University

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device-and system-level development, is clearly one of the most critical issues. This article broadly discusses the essential requirements, up-To-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology.

Original languageEnglish
Article number9180337
Pages (from-to)1404-1415
Number of pages12
JournalIEEE Journal of the Electron Devices Society
Volume8
DOIs
Publication statusPublished - 1 Jan 2020

Keywords

  • Organic field-effect transistors (OFETs)
  • circuit simulation
  • compact modeling
  • device physics
  • flexible and printed electronics

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