TY - JOUR
T1 - Ag-alloying of CIGS absorber layers
T2 - impact of the composition, rubidium fluoride post-treatment and bandgap variations
AU - Tom, Thomas
AU - Lontchi, Jackson
AU - Rebai, Amelle
AU - Dufoulon, Vincent
AU - Guillemoles, Jean Francois
AU - Naghavi, Negar
N1 - Publisher Copyright:
© 2025 The Author(s). Published by IOP Publishing Ltd.
PY - 2025/10/31
Y1 - 2025/10/31
N2 - Chalcopyrite-based solar cells have achieved remarkable efficiency, yet further advancements remain challenging. The partial substitution of copper (Cu) with silver (Ag) in Cu(In,Ga)Se2 (CIGS) thin-film solar cells presents a promising approach to enhance absorber properties and improving device performance. This study explores the moderately high-concentration Ag incorporation (Ag/(Ag + Cu) = 0.19) via thermal evaporation prior to co-evaporation of CIGS absorbers, combined with rubidium fluoride (RbF) post-deposition treatment. Additionally, the impact of Ag alloying is examined across absorbers with bandgaps ranging from 1.12 to 1.55 eV. Results indicate that Ag incorporation significantly influences gallium distribution, promotes larger grain growth, and enhances open-circuit voltage (Voc). Notably, (Ag,Cu)(In,Ga)Se2 (ACIGS) absorber with a 1.23 eV bandgap achieves a power conversion efficiency of 18.1%, while a 1.55 eV bandgap absorber reaches 7.1%.
AB - Chalcopyrite-based solar cells have achieved remarkable efficiency, yet further advancements remain challenging. The partial substitution of copper (Cu) with silver (Ag) in Cu(In,Ga)Se2 (CIGS) thin-film solar cells presents a promising approach to enhance absorber properties and improving device performance. This study explores the moderately high-concentration Ag incorporation (Ag/(Ag + Cu) = 0.19) via thermal evaporation prior to co-evaporation of CIGS absorbers, combined with rubidium fluoride (RbF) post-deposition treatment. Additionally, the impact of Ag alloying is examined across absorbers with bandgaps ranging from 1.12 to 1.55 eV. Results indicate that Ag incorporation significantly influences gallium distribution, promotes larger grain growth, and enhances open-circuit voltage (Voc). Notably, (Ag,Cu)(In,Ga)Se2 (ACIGS) absorber with a 1.23 eV bandgap achieves a power conversion efficiency of 18.1%, while a 1.55 eV bandgap absorber reaches 7.1%.
KW - ACIGS
KW - Ag-alloying
KW - chalcopyrite
KW - solar cells
UR - https://www.scopus.com/pages/publications/105011653353
U2 - 10.1088/2515-7655/adf00d
DO - 10.1088/2515-7655/adf00d
M3 - Article
AN - SCOPUS:105011653353
SN - 2515-7655
VL - 7
JO - JPhys Energy
JF - JPhys Energy
IS - 4
M1 - 045005
ER -