Abstract
An all-around stressor approach is presented to introduce homogeneous and high tensile strain, both in-plane and vertically, into n-doped germanium microdisks. A maximum biaxial strain up to 1.5% is achieved, close to the requirement to obtain a direct band gap germanium. The possibilities to obtain in this configuration modal optical gain in germanium microdisk cavities are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 353-358 |
| Number of pages | 6 |
| Journal | Advanced Optical Materials |
| Volume | 3 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 Mar 2015 |
Keywords
- Germanium
- Microdisks
- Silicon photonics
- Strain engineering
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