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Ambipolar spin-spin coupling in p+ -GaAs

  • Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN)

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field, which is created by the differential movement of the photoelectrons and the photoholes. Like the Coulomb spin drag, it is a pure spin coupling that does not affect charge diffusion. Experimentally, the coupling is studied in p+-GaAs using polarized microluminescence. The coupling manifests itself as an excitation power-dependent reduction in the spin polarization at the excitation spot without any change of the spatially averaged spin polarization.

Original languageEnglish
Article number121203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number12
DOIs
Publication statusPublished - 30 Sept 2015

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