An active load‐pull measurement system using two six‐port reflectometers

F. Deshours; E. Bergeault; L. Jallet; B. Huyart

doi:10.1002/mop.4650071415

An active load‐pull measurement system using two six‐port reflectometers

F. Deshours, E. Bergeault, L. Jallet, B. Huyart

Telecom Paris

Research output: Contribution to journal › Article › peer-review

Abstract

This article presents a microwave active Load‐Pull measurement system, using two wide‐band six‐port junctions in order to have nonlinear characterization of power transistors. Experimental results performed on a 900‐μm MESFET for different operating classes are reported and discussed. © 1994 John Wiley & Sons, Inc.

Original language	English
Pages (from-to)	679-684
Number of pages	6
Journal	Microwave and Optical Technology Letters
Volume	7
Issue number	14
DOIs	https://doi.org/10.1002/mop.4650071415
Publication status	Published - 1 Jan 1994

Keywords

Six‐port reflectometer
loan pull
power transistor

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10.1002/mop.4650071415

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title = "An active load‐pull measurement system using two six‐port reflectometers",

abstract = "This article presents a microwave active Load‐Pull measurement system, using two wide‐band six‐port junctions in order to have nonlinear characterization of power transistors. Experimental results performed on a 900‐μm MESFET for different operating classes are reported and discussed. {\textcopyright} 1994 John Wiley \& Sons, Inc.",

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author = "F. Deshours and E. Bergeault and L. Jallet and B. Huyart",

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doi = "10.1002/mop.4650071415",

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AU - Deshours, F.

AU - Bergeault, E.

AU - Jallet, L.

AU - Huyart, B.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - This article presents a microwave active Load‐Pull measurement system, using two wide‐band six‐port junctions in order to have nonlinear characterization of power transistors. Experimental results performed on a 900‐μm MESFET for different operating classes are reported and discussed. © 1994 John Wiley & Sons, Inc.

AB - This article presents a microwave active Load‐Pull measurement system, using two wide‐band six‐port junctions in order to have nonlinear characterization of power transistors. Experimental results performed on a 900‐μm MESFET for different operating classes are reported and discussed. © 1994 John Wiley & Sons, Inc.

KW - Six‐port reflectometer

KW - loan pull

KW - power transistor

U2 - 10.1002/mop.4650071415

DO - 10.1002/mop.4650071415

M3 - Article

AN - SCOPUS:0028765623

SN - 0895-2477

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EP - 684

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 14

ER -

An active load‐pull measurement system using two six‐port reflectometers

Abstract

Keywords

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