TY - JOUR
T1 - An investigation of the temperature and electric field dependence of a GaAs microwave photoconductive switch
AU - Saddow, Stephen E.
AU - Thedrez, Bruno J.
AU - Huang, Sheng Lung L.
AU - Mermagen, Timothy J.
AU - Lee, Chi H.
N1 - Publisher Copyright:
© 1993 SPIE. All rights reserved.
PY - 1993/6/9
Y1 - 1993/6/9
N2 - The on-resistance of a GaAs coplanar waveguide-photoconductive switch was characterized as a function of laser photon energy, switch temperature, and applied dc electric field. An electric-fielddependent resonance at photon energies near the GaAs energy band-gap edge has been observed. This resonant behavior is believed to be caused by a competition between carrier recombination in the switch bulk and carrier sweep-out effects near the switch surface. This field-induced resonance was verified with 5, 10 and 20 μm switch gaps that were fabricated on three separate semi-insulating GaAs wafers. For fixed-wavelength laser sources, it has been shown that one can optimize the optical coupling by varying the switch temperature. The switch resistance decreased by a factor of three as a result of an increase in the switch temperature of 20°C at photon energies near the absorption edge. A conductive-mode plasma model has been developed that adequately predicts the nonresonant switch behavior. 89.
AB - The on-resistance of a GaAs coplanar waveguide-photoconductive switch was characterized as a function of laser photon energy, switch temperature, and applied dc electric field. An electric-fielddependent resonance at photon energies near the GaAs energy band-gap edge has been observed. This resonant behavior is believed to be caused by a competition between carrier recombination in the switch bulk and carrier sweep-out effects near the switch surface. This field-induced resonance was verified with 5, 10 and 20 μm switch gaps that were fabricated on three separate semi-insulating GaAs wafers. For fixed-wavelength laser sources, it has been shown that one can optimize the optical coupling by varying the switch temperature. The switch resistance decreased by a factor of three as a result of an increase in the switch temperature of 20°C at photon energies near the absorption edge. A conductive-mode plasma model has been developed that adequately predicts the nonresonant switch behavior. 89.
UR - https://www.scopus.com/pages/publications/84941505060
U2 - 10.1117/12.146555
DO - 10.1117/12.146555
M3 - Conference article
AN - SCOPUS:84941505060
SN - 0277-786X
VL - 1873
SP - 89
EP - 96
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Optically Activated Switching III 1993
Y2 - 17 January 1993 through 22 January 1993
ER -