Abstract
The on-resistance of a GaAs coplanar waveguide-photoconductive switch was characterized as a function of laser photon energy, switch temperature, and applied dc electric field. An electric-fielddependent resonance at photon energies near the GaAs energy band-gap edge has been observed. This resonant behavior is believed to be caused by a competition between carrier recombination in the switch bulk and carrier sweep-out effects near the switch surface. This field-induced resonance was verified with 5, 10 and 20 μm switch gaps that were fabricated on three separate semi-insulating GaAs wafers. For fixed-wavelength laser sources, it has been shown that one can optimize the optical coupling by varying the switch temperature. The switch resistance decreased by a factor of three as a result of an increase in the switch temperature of 20°C at photon energies near the absorption edge. A conductive-mode plasma model has been developed that adequately predicts the nonresonant switch behavior. 89.
| Original language | English |
|---|---|
| Pages (from-to) | 89-96 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1873 |
| DOIs | |
| Publication status | Published - 9 Jun 1993 |
| Externally published | Yes |
| Event | Optically Activated Switching III 1993 - Los Angeles, United States Duration: 17 Jan 1993 → 22 Jan 1993 |
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