Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

Y. Poissant; P. Chatterjee; P. Roca i Cabarrocas

doi:10.1063/1.1623610

Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

Y. Poissant, P. Chatterjee, P. Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.

Original language	English
Pages (from-to)	7305-7316
Number of pages	12
Journal	Journal of Applied Physics
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.1623610
Publication status	Published - 1 Dec 2003

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title = "Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling",

abstract = "The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.",

author = "Y. Poissant and P. Chatterjee and \{Roca i Cabarrocas\}, P.",

year = "2003",

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AU - Chatterjee, P.

AU - Roca i Cabarrocas, P.

PY - 2003/12/1

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N2 - The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.

AB - The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.

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DO - 10.1063/1.1623610

M3 - Article

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SN - 0021-8979

VL - 94

SP - 7305

EP - 7316

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

Abstract

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