Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

Y. Poissant; P. Chatterjee; P. Roca i Cabarrocas

doi:10.1063/1.1623610

Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

Y. Poissant
, P. Chatterjee
, P. Roca i Cabarrocas

Institut polytechnique de Paris
Indian Association for the Cultivation of Science

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.

Original language	English
Pages (from-to)	7305-7316
Number of pages	12
Journal	Journal of Applied Physics
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.1623610
Publication status	Published - 1 Dec 2003

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title = "Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling",

abstract = "The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.",

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AB - The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.

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DO - 10.1063/1.1623610

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Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

Abstract

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