Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation

Sofiane Belahsene; Noor Alhuda Al Saqri; Dler Jameel; Abdelmadjid Mesli; Anthony Martinez; Jacques De Sanoit; Abdallah Ougazzaden; Jean Paul Salvestrini; Abderrahim Ramdane; Mohamed Henini

doi:10.3390/electronics4041090

Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation

Sofiane Belahsene
, Noor Alhuda Al Saqri
, Dler Jameel
, Abdelmadjid Mesli
, Anthony Martinez
, Jacques De Sanoit
, Abdallah Ougazzaden
, Jean Paul Salvestrini
, Abderrahim Ramdane
, Mohamed Henini

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 10¹⁴ to 3.6 × 10¹⁵ cm⁻³, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 10¹⁴ cm⁻³. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.

Original language	English
Pages (from-to)	1099-1100
Number of pages	2
Journal	Electronics (Switzerland)
Volume	4
Issue number	4
DOIs	https://doi.org/10.3390/electronics4041090
Publication status	Published - 4 Dec 2015

Keywords

Activation energy
Beta irradiation
Deep level transient spectroscopy (DLTS)
GaN p-i-n diodes

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10.3390/electronics4041090

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@article{c07e400c5a3a4341bbf963f4d96013b6,

title = "Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation",

abstract = "The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.",

keywords = "Activation energy, Beta irradiation, Deep level transient spectroscopy (DLTS), GaN p-i-n diodes",

author = "Sofiane Belahsene and Saqri, \{Noor Alhuda Al\} and Dler Jameel and Abdelmadjid Mesli and Anthony Martinez and Sanoit, \{Jacques De\} and Abdallah Ougazzaden and Salvestrini, \{Jean Paul\} and Abderrahim Ramdane and Mohamed Henini",

note = "Publisher Copyright: {\textcopyright} 2015 by the authors; licensee MDPI, Basel, Switzerland.",

year = "2015",

month = dec,

day = "4",

doi = "10.3390/electronics4041090",

language = "English",

volume = "4",

pages = "1099--1100",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

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TY - JOUR

T1 - Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation

AU - Belahsene, Sofiane

AU - Saqri, Noor Alhuda Al

AU - Jameel, Dler

AU - Mesli, Abdelmadjid

AU - Martinez, Anthony

AU - Sanoit, Jacques De

AU - Ougazzaden, Abdallah

AU - Salvestrini, Jean Paul

AU - Ramdane, Abderrahim

AU - Henini, Mohamed

PY - 2015/12/4

Y1 - 2015/12/4

N2 - The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.

AB - The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.

KW - Activation energy

KW - Beta irradiation

KW - Deep level transient spectroscopy (DLTS)

KW - GaN p-i-n diodes

UR - https://www.scopus.com/pages/publications/84958160453

U2 - 10.3390/electronics4041090

DO - 10.3390/electronics4041090

M3 - Article

AN - SCOPUS:84958160453

SN - 2079-9292

VL - 4

SP - 1099

EP - 1100

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 4

ER -

Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation

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Keywords

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