Analysis of the double laser emission occurring in 1.55-μm InAs - InP (113)B quantum-dot lasers

Kiril Veselinov; Frédéric Grillot; Charles Cornet; Jacky Even; Alexander Bekiarski; Mariangela Gioannini; Slimane Loualiche

doi:10.1109/JQE.2007.902386

Analysis of the double laser emission occurring in 1.55-μm InAs - InP (113)B quantum-dot lasers

Kiril Veselinov
, Frédéric Grillot
, Charles Cornet
, Jacky Even
, Alexander Bekiarski
, Mariangela Gioannini
, Slimane Loualiche

Laboratoire d'Etude des Nanostructures À Semiconducteurs
INSA Rennes
Technical University Sofia
Dipartamento di Elettronica
Politecnico di Torino

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

In this paper, a theoretical model based on rate equations is used to investigate static and dynamic behaviors of InAs - InP (113)B quantum-dot (QD) lasers emitting at 1.55 μm. More particularly, it is shown that two modelling approaches are required to explain the origin of the double laser emission occurring in QD lasers grown on both, GaAs and InP substrates. Numerical results are compared to experimental ones by using either a cascade or a direct relaxation channel model. The comparison demonstrates that when a direct relaxation channel is taken into account, the numerical results match very well the experimental ones and lead to a qualitative understanding of InAs - InP (113)B QD lasers. Numerical calculations for the turn-on delay are also presented. A relaxation oscillation frequency as high as 10 GHz is predicted which is very promising for the realization of directly modulated QD lasers for high-speed transmissions.

Original language	English
Pages (from-to)	810-816
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	43
Issue number	9
DOIs	https://doi.org/10.1109/JQE.2007.902386
Publication status	Published - 1 Sept 2007
Externally published	Yes

Keywords

Double emission
Inp
Quantum dots (qds)
Rate equations

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10.1109/JQE.2007.902386

Cite this

@article{3c2415ec51204e44947236cb8604fa12,

title = "Analysis of the double laser emission occurring in 1.55-μm InAs - InP (113)B quantum-dot lasers",

abstract = "In this paper, a theoretical model based on rate equations is used to investigate static and dynamic behaviors of InAs - InP (113)B quantum-dot (QD) lasers emitting at 1.55 μm. More particularly, it is shown that two modelling approaches are required to explain the origin of the double laser emission occurring in QD lasers grown on both, GaAs and InP substrates. Numerical results are compared to experimental ones by using either a cascade or a direct relaxation channel model. The comparison demonstrates that when a direct relaxation channel is taken into account, the numerical results match very well the experimental ones and lead to a qualitative understanding of InAs - InP (113)B QD lasers. Numerical calculations for the turn-on delay are also presented. A relaxation oscillation frequency as high as 10 GHz is predicted which is very promising for the realization of directly modulated QD lasers for high-speed transmissions.",

keywords = "Double emission, Inp, Quantum dots (qds), Rate equations",

author = "Kiril Veselinov and Fr{\'e}d{\'e}ric Grillot and Charles Cornet and Jacky Even and Alexander Bekiarski and Mariangela Gioannini and Slimane Loualiche",

year = "2007",

month = sep,

day = "1",

doi = "10.1109/JQE.2007.902386",

language = "English",

volume = "43",

pages = "810--816",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Analysis of the double laser emission occurring in 1.55-μm InAs - InP (113)B quantum-dot lasers

AU - Veselinov, Kiril

AU - Grillot, Frédéric

AU - Cornet, Charles

AU - Even, Jacky

AU - Bekiarski, Alexander

AU - Gioannini, Mariangela

AU - Loualiche, Slimane

PY - 2007/9/1

Y1 - 2007/9/1

N2 - In this paper, a theoretical model based on rate equations is used to investigate static and dynamic behaviors of InAs - InP (113)B quantum-dot (QD) lasers emitting at 1.55 μm. More particularly, it is shown that two modelling approaches are required to explain the origin of the double laser emission occurring in QD lasers grown on both, GaAs and InP substrates. Numerical results are compared to experimental ones by using either a cascade or a direct relaxation channel model. The comparison demonstrates that when a direct relaxation channel is taken into account, the numerical results match very well the experimental ones and lead to a qualitative understanding of InAs - InP (113)B QD lasers. Numerical calculations for the turn-on delay are also presented. A relaxation oscillation frequency as high as 10 GHz is predicted which is very promising for the realization of directly modulated QD lasers for high-speed transmissions.

AB - In this paper, a theoretical model based on rate equations is used to investigate static and dynamic behaviors of InAs - InP (113)B quantum-dot (QD) lasers emitting at 1.55 μm. More particularly, it is shown that two modelling approaches are required to explain the origin of the double laser emission occurring in QD lasers grown on both, GaAs and InP substrates. Numerical results are compared to experimental ones by using either a cascade or a direct relaxation channel model. The comparison demonstrates that when a direct relaxation channel is taken into account, the numerical results match very well the experimental ones and lead to a qualitative understanding of InAs - InP (113)B QD lasers. Numerical calculations for the turn-on delay are also presented. A relaxation oscillation frequency as high as 10 GHz is predicted which is very promising for the realization of directly modulated QD lasers for high-speed transmissions.

KW - Double emission

KW - Inp

KW - Quantum dots (qds)

KW - Rate equations

U2 - 10.1109/JQE.2007.902386

DO - 10.1109/JQE.2007.902386

M3 - Article

AN - SCOPUS:49449095827

SN - 0018-9197

VL - 43

SP - 810

EP - 816

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 9

ER -

Analysis of the double laser emission occurring in 1.55-μm InAs - InP (113)B quantum-dot lasers

Abstract

Keywords

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