Abstract
An analytic model of J-V characteristics of photovoltaic devices based on quantum dot (QD) solids is developed. The model yields the upper estimation of the power conversion efficiency and predicts its extremal dependence on the diffusion length of excitons. The predictive power of our model is approved by the comparison with the experimental data for PbS QD-based solar cells.
| Original language | English |
|---|---|
| Article number | 1940083 |
| Journal | International Journal of Nanoscience |
| Volume | 18 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 1 Jun 2019 |
| Externally published | Yes |
Keywords
- J - V characteristics
- Quantum dots
- excitons
- photovoltaic cells