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Analytical descriptions of the band structure of direct-band-gap zinc-blende-structure semiconductors in the kp Kane model

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Abstract

In the framework of the well-known kp Kane band theory, accurate analytical approximations of conduction- and valence-band dispersion of direct-band-gap zinc-blende-structure semiconductors are derived when the spin-orbit-splitting energy does not exceed the band-gap energy. These approximations include the interactions with the remote bands. The expressions of the eigenfunctions are also obtained. The present analysis elucidates and unifies previous analytical band descriptions.

Original languageEnglish
Pages (from-to)7993-7998
Number of pages6
JournalPhysical Review B
Volume44
Issue number15
DOIs
Publication statusPublished - 1 Jan 1991

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