Anisotropic magneto-thermopower in 3d ferromagnets

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Abstract

Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance occurring in the ferromagnetic layer. On the basis of a generalized two-channel model, it is shown that there is an interface resistance contribution due to anisotropic scattering, besides spin accumulation and giant magnetoresistance. The corresponding expression of the thermoelectric power is derived and compared with the expression accounting for the thermoelectric power produced by the giant magnetoresistance. The results of this study show that, while the giant magnetoresistance and the corresponding thermoelectric power indicate the role of spin-flip scattering, the observed anisotropic magneto-thermoelectric power might be the fingerprint of interband s-d relaxation mechanisms.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices III
DOIs
Publication statusPublished - 26 May 2006
EventQuantum Sensing and Nanophotonic Devices III - San Jose, CA, United States
Duration: 23 Jan 200626 Jan 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6127
ISSN (Print)0277-786X

Conference

ConferenceQuantum Sensing and Nanophotonic Devices III
Country/TerritoryUnited States
CitySan Jose, CA
Period23/01/0626/01/06

Keywords

  • Anisotropic magnetoresistance
  • Giant magnetoresistance
  • Magnetic nanostructures
  • Spin dependent scattering
  • Spin injection
  • Spintronics
  • Thermoelectric power

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