Abstract
A very high-resistivity value (ρ4k~4300 μΩcm), associated to a strong negative temperature dependence (∞ = l/ρ ∆ρ/∆ρ ~-10-3K-1), is measured in pure icosahedral A163Cu25Fe12 phases (a single grain and polyq&erystalline samples). Moreover the resistivity of the defective as-quenched A163Cu25Fe12 samples is much smaller (ρ4k~1300 μΩcm) and increases sharply (up to -4300 μΩcm) after annealing treatment. We show also that the temperature and magnetic-field dependences of the resistivity and the Hall effect can be analysed through electron-electron interactions and localization theories.
| Original language | English |
|---|---|
| Pages (from-to) | 129-134 |
| Number of pages | 6 |
| Journal | EPL |
| Volume | 13 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 15 Sept 1990 |
| Externally published | Yes |