Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

  • J. Hernández-Saz
  • , M. Herrera
  • , F. J. Delgado
  • , S. Duguay
  • , T. Philippe
  • , M. Gonzalez
  • , J. Abell
  • , R. J. Walters
  • , S. I. Molina

Research output: Contribution to journalArticlepeer-review

Abstract

The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.

Original languageEnglish
Article number305402
JournalNanotechnology
Volume27
Issue number30
DOIs
Publication statusPublished - 16 Jun 2016

Keywords

  • InAlAsSb
  • atom probe tomography
  • compositional distribution
  • radial distribution function
  • triple junction solar cell

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