Abstract
The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.
| Original language | English |
|---|---|
| Article number | 305402 |
| Journal | Nanotechnology |
| Volume | 27 |
| Issue number | 30 |
| DOIs | |
| Publication status | Published - 16 Jun 2016 |
Keywords
- InAlAsSb
- atom probe tomography
- compositional distribution
- radial distribution function
- triple junction solar cell