Atomic Force Microscopy Measurement of the Resistivity of Semiconductors

V. A. Smirnov; R. V. Tominov; N. I. Alyab’eva; M. V. Il’ina; V. V. Polyakova; Al V. Bykov; O. A. Ageev

doi:10.1134/S1063784218080182

Atomic Force Microscopy Measurement of the Resistivity of Semiconductors

V. A. Smirnov
, R. V. Tominov
, N. I. Alyab’eva
, M. V. Il’ina
, V. V. Polyakova
, Al V. Bykov
, O. A. Ageev

Institute of Nanotechnologies
Southern Federal University
Université Paris-Saclay

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.

Original language	English
Pages (from-to)	1236-1241
Number of pages	6
Journal	Technical Physics
Volume	63
Issue number	8
DOIs	https://doi.org/10.1134/S1063784218080182
Publication status	Published - 1 Aug 2018
Externally published	Yes

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title = "Atomic Force Microscopy Measurement of the Resistivity of Semiconductors",

abstract = "The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe{\textendash}substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.",

author = "Smirnov, \{V. A.\} and Tominov, \{R. V.\} and Alyab{\textquoteright}eva, \{N. I.\} and Il{\textquoteright}ina, \{M. V.\} and Polyakova, \{V. V.\} and Bykov, \{Al V.\} and Ageev, \{O. A.\}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = aug,

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doi = "10.1134/S1063784218080182",

language = "English",

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TY - JOUR

T1 - Atomic Force Microscopy Measurement of the Resistivity of Semiconductors

AU - Smirnov, V. A.

AU - Tominov, R. V.

AU - Alyab’eva, N. I.

AU - Il’ina, M. V.

AU - Polyakova, V. V.

AU - Bykov, Al V.

AU - Ageev, O. A.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.

AB - The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.

UR - https://www.scopus.com/pages/publications/85051712993

U2 - 10.1134/S1063784218080182

DO - 10.1134/S1063784218080182

M3 - Article

AN - SCOPUS:85051712993

SN - 1063-7842

VL - 63

SP - 1236

EP - 1241

JO - Technical Physics

JF - Technical Physics

IS - 8

ER -

Atomic Force Microscopy Measurement of the Resistivity of Semiconductors

Abstract

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