Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

A. Talneau; C. Roblin; A. Itawi; O. Mauguin; L. Largeau; G. Beaudouin; I. Sagnes; G. Patriarche; C. Pang; H. Benisty

doi:10.1063/1.4807890

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, G. Beaudouin, I. Sagnes, G. Patriarche, C. Pang, H. Benisty

Research output: Contribution to journal › Article › peer-review

Abstract

An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no degradation of the quantum wells luminescence is demonstrated. Several InP surface preparation procedures have been investigated to ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial bonding is also similarly obtained on nanopatterned Si surface.

Original language	English
Article number	212101
Journal	Applied Physics Letters
Volume	102
Issue number	21
DOIs	https://doi.org/10.1063/1.4807890
Publication status	Published - 27 May 2013
Externally published	Yes

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10.1063/1.4807890

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title = "Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon",

abstract = "An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no degradation of the quantum wells luminescence is demonstrated. Several InP surface preparation procedures have been investigated to ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial bonding is also similarly obtained on nanopatterned Si surface.",

author = "A. Talneau and C. Roblin and A. Itawi and O. Mauguin and L. Largeau and G. Beaudouin and I. Sagnes and G. Patriarche and C. Pang and H. Benisty",

year = "2013",

month = may,

day = "27",

doi = "10.1063/1.4807890",

language = "English",

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T1 - Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

AU - Talneau, A.

AU - Roblin, C.

AU - Itawi, A.

AU - Mauguin, O.

AU - Largeau, L.

AU - Beaudouin, G.

AU - Sagnes, I.

AU - Patriarche, G.

AU - Pang, C.

AU - Benisty, H.

PY - 2013/5/27

Y1 - 2013/5/27

N2 - An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no degradation of the quantum wells luminescence is demonstrated. Several InP surface preparation procedures have been investigated to ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial bonding is also similarly obtained on nanopatterned Si surface.

AB - An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no degradation of the quantum wells luminescence is demonstrated. Several InP surface preparation procedures have been investigated to ensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allows embedding very-high-index-contrast nanostructuration within optic and optoelectronic integrated devices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxial bonding is also similarly obtained on nanopatterned Si surface.

U2 - 10.1063/1.4807890

DO - 10.1063/1.4807890

M3 - Article

AN - SCOPUS:84879089182

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212101

ER -

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

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